Ionizing radiation tolerance of stacked Si₃N₄-SiO₂ gate insulators for power MOSFETs

Physics & Astronomy

• radiation tolerance 83%
• ionizing radiation 73%
• nitrides 65%
• field effect transistors 55%
• insulators 52%
• capacitors 46%
• oxides 44%
• metal oxide semiconductors 36%
• metal-nitride-oxide-semiconductors 32%
• traps 26%
• dosage 23%
• computer aided design 20%
• radiation effects 19%
• radiation 19%
• passivity 16%
• energy levels 14%
• irradiation 11%
• hydrogen 10%
• characterization 9%
• simulation 6%

Chemical Compounds

• Ionizing Radiation 86%
• Nonconductor 79%
• Interface Trap 78%
• Capacitor 72%
• Nitride 68%
• Oxide 38%
• Dose 36%
• Radiation Effect 34%
• Chemical Passivation 23%
• Field Effect 23%
• Simulation 14%
• Hydrogen 11%
• Energy 11%

Engineering & Materials Science

• Ionizing radiation 100%
• Power MOSFET 91%
• Nitrides 85%
• Oxides 48%
• Oxide semiconductors 33%
• Capacitors 33%
• Radiation effects 18%
• Metals 18%
• Dosimetry 17%
• Passivation 17%
• MOSFET devices 16%
• Electron energy levels 16%
• Irradiation 14%
• Computer aided design 11%
• Hydrogen 11%
• Radiation 11%