Ionizing radiation tolerance of stacked Si3N4-SiO2 gate insulators for power MOSFETs

K. Muthuseenu, H. J. Barnaby, A. Patadia, K. Holbert, A. Privat

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The total ionizing dose radiation response of metal-nitride-oxide-semiconductor capacitors are examined. Capacitors with different oxide and nitride thickness combinations are fabricated and irradiated using a Co-60 gamma source. Electrical characterization showed all samples with oxide/nitride stack gate insulators exhibited significantly higher tolerance to irradiation when compared to metal-oxide-semiconductor capacitors. Thick oxide-nitride layers can be used as gate insulators in power metal-oxide-semiconductor field effect transistors. Technology computer-aided design simulations are performed to characterize the radiation effects mechanisms. Spatially distributed interface traps at shallow energy level were present in all the oxide/nitride stacks. These interface traps decrease as total dose increases. This result may be due to radiation induced hydrogen passivation.

Original languageEnglish (US)
Article number113554
JournalMicroelectronics Reliability
Volume104
DOIs
StatePublished - Jan 2020

Keywords

  • Gate oxides
  • Heiman model
  • High-k dielectrics
  • Hydrogen passivation
  • Interface trap
  • Ionizing dose
  • Nitride
  • Power MOSFET
  • Radiation hardening

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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