Abstract
The total ionizing dose radiation response of metal-nitride-oxide-semiconductor capacitors are examined. Capacitors with different oxide and nitride thickness combinations are fabricated and irradiated using a Co-60 gamma source. Electrical characterization showed all samples with oxide/nitride stack gate insulators exhibited significantly higher tolerance to irradiation when compared to metal-oxide-semiconductor capacitors. Thick oxide-nitride layers can be used as gate insulators in power metal-oxide-semiconductor field effect transistors. Technology computer-aided design simulations are performed to characterize the radiation effects mechanisms. Spatially distributed interface traps at shallow energy level were present in all the oxide/nitride stacks. These interface traps decrease as total dose increases. This result may be due to radiation induced hydrogen passivation.
| Original language | English (US) |
|---|---|
| Article number | 113554 |
| Journal | Microelectronics Reliability |
| Volume | 104 |
| DOIs | |
| State | Published - Jan 2020 |
Keywords
- Gate oxides
- Heiman model
- High-k dielectrics
- Hydrogen passivation
- Interface trap
- Ionizing dose
- Nitride
- Power MOSFET
- Radiation hardening
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering