TY - GEN
T1 - Ionic memory - materials and device characteristics
AU - Kozicki, Michael
PY - 2008
Y1 - 2008
N2 - Scalable elements that can be switched between widely-separated non-volatile resistance states at very low power are desirable for applications in next generation memory and logic. One promising approach involves the use of solid ion-conducting films. A mobile metal ion-containing glassy electrolyte film sandwiched between an oxidizable metal layer and an inert electrode constitutes a device which reversibly transitions between high and low resistance states. The resistance reduction occurs by the formation of a nanoscale conducting pathway created by reduction of the metal ions. A reverse bias dissolves the connection. In addition to possessing the speed, endurance, retention, and CMOS compatibility required of future switching elements, such devices have excellent scaling prospects due to their low operational energy and demonstrated physical scalability. This paper discusses the materials and mechanisms of ionic memory and presents the electrical characteristics of devices formed from Ag-Ge-S and Cu-Si-O electrolytes as examples of the technology.
AB - Scalable elements that can be switched between widely-separated non-volatile resistance states at very low power are desirable for applications in next generation memory and logic. One promising approach involves the use of solid ion-conducting films. A mobile metal ion-containing glassy electrolyte film sandwiched between an oxidizable metal layer and an inert electrode constitutes a device which reversibly transitions between high and low resistance states. The resistance reduction occurs by the formation of a nanoscale conducting pathway created by reduction of the metal ions. A reverse bias dissolves the connection. In addition to possessing the speed, endurance, retention, and CMOS compatibility required of future switching elements, such devices have excellent scaling prospects due to their low operational energy and demonstrated physical scalability. This paper discusses the materials and mechanisms of ionic memory and presents the electrical characteristics of devices formed from Ag-Ge-S and Cu-Si-O electrolytes as examples of the technology.
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U2 - 10.1109/ICSICT.2008.4734690
DO - 10.1109/ICSICT.2008.4734690
M3 - Conference contribution
AN - SCOPUS:60649112719
SN - 9781424421855
T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
SP - 897
EP - 900
BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Y2 - 20 October 2008 through 23 October 2008
ER -