Ion-stimulated desorption of positive halogen ions

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

The ejection of F+ ions from fluorinated silicon by Ar+ or O2+ impact at 2-10 keV is shown to result from noncollisional processes which follow core-hole creation by the primary ion impact. The ejection mechanism is shown to be closely similar to electron-stimulated desorption, and can be explained using the model of Knotek and Feibelman. Cl+ ejection from chlorinated aluminum appears to result from a similar mechanism, whereas O+ ejection from oxygen-sputtered silicon appears to be purely collisional. The latter observation is shown to be consistent with the Knotek-Feibelman model.

Original languageEnglish (US)
Pages (from-to)6187-6190
Number of pages4
JournalPhysical Review B
Volume23
Issue number11
DOIs
StatePublished - 1981
Externally publishedYes

Fingerprint

Halogens
Silicon
ejection
halogens
Desorption
desorption
Ions
Aluminum
ions
Oxygen
ion impact
Electrons
silicon
aluminum
oxygen
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Ion-stimulated desorption of positive halogen ions. / Williams, Peter.

In: Physical Review B, Vol. 23, No. 11, 1981, p. 6187-6190.

Research output: Contribution to journalArticle

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