We report the epitaxial growth of sol-gel TiO2 films by using ion-irradiation enhanced synthesis. Our present study shows that the ion-beam process can provide highly crystalline TiO2 even at 350°C. Nuclear energy deposition at amorphous/crystalline interface plays a dominant role in the epitaxial growth of the films at the reduced temperature via a defect-migration mechanism. In addition, the ion irradiation allows for increasing the film density by balancing the crystallization rate and the escape rate of organic components.
|Original language||English (US)|
|Number of pages||6|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Apr 1 2011|
ASJC Scopus subject areas
- Materials Science(all)