Ion-irradiation enhanced epitaxial growth of sol-gel TiO2 films

Jung Kun Lee; Hyun Suk Jung; Yongqiang Wang; N. David Theodore; Terry Alford; Michael Nastasi

doi:10.1007/s00339-010-5985-5

Ion-irradiation enhanced epitaxial growth of sol-gel TiO₂ films

Jung Kun Lee, Hyun Suk Jung, Yongqiang Wang, N. David Theodore, Terry Alford, Michael Nastasi

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report the epitaxial growth of sol-gel TiO₂ films by using ion-irradiation enhanced synthesis. Our present study shows that the ion-beam process can provide highly crystalline TiO₂ even at 350°C. Nuclear energy deposition at amorphous/crystalline interface plays a dominant role in the epitaxial growth of the films at the reduced temperature via a defect-migration mechanism. In addition, the ion irradiation allows for increasing the film density by balancing the crystallization rate and the escape rate of organic components.

Original language	English (US)
Pages (from-to)	179-184
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	103
Issue number	1
DOIs	https://doi.org/10.1007/s00339-010-5985-5
State	Published - Apr 2011

ASJC Scopus subject areas

General Chemistry
General Materials Science

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abstract = "We report the epitaxial growth of sol-gel TiO2 films by using ion-irradiation enhanced synthesis. Our present study shows that the ion-beam process can provide highly crystalline TiO2 even at 350°C. Nuclear energy deposition at amorphous/crystalline interface plays a dominant role in the epitaxial growth of the films at the reduced temperature via a defect-migration mechanism. In addition, the ion irradiation allows for increasing the film density by balancing the crystallization rate and the escape rate of organic components.",

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AU - Alford, Terry

AU - Nastasi, Michael

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AB - We report the epitaxial growth of sol-gel TiO2 films by using ion-irradiation enhanced synthesis. Our present study shows that the ion-beam process can provide highly crystalline TiO2 even at 350°C. Nuclear energy deposition at amorphous/crystalline interface plays a dominant role in the epitaxial growth of the films at the reduced temperature via a defect-migration mechanism. In addition, the ion irradiation allows for increasing the film density by balancing the crystallization rate and the escape rate of organic components.

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Ion-irradiation enhanced epitaxial growth of sol-gel TiO₂ films

Abstract

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