Abstract

We report the epitaxial growth of sol-gel TiO2 films by using ion-irradiation enhanced synthesis. Our present study shows that the ion-beam process can provide highly crystalline TiO2 even at 350°C. Nuclear energy deposition at amorphous/crystalline interface plays a dominant role in the epitaxial growth of the films at the reduced temperature via a defect-migration mechanism. In addition, the ion irradiation allows for increasing the film density by balancing the crystallization rate and the escape rate of organic components.

Original languageEnglish (US)
Pages (from-to)179-184
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume103
Issue number1
DOIs
StatePublished - Apr 2011

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Ion bombardment
ion irradiation
Epitaxial growth
Sol-gels
gels
Crystalline materials
nuclear energy
Crystallization
Nuclear energy
Ion beams
escape
ion beams
crystallization
Defects
defects
synthesis
Temperature
temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

Cite this

Ion-irradiation enhanced epitaxial growth of sol-gel TiO2 films. / Lee, Jung Kun; Jung, Hyun Suk; Wang, Yongqiang; Theodore, N. David; Alford, Terry; Nastasi, Michael.

In: Applied Physics A: Materials Science and Processing, Vol. 103, No. 1, 04.2011, p. 179-184.

Research output: Contribution to journalArticle

Lee, Jung Kun ; Jung, Hyun Suk ; Wang, Yongqiang ; Theodore, N. David ; Alford, Terry ; Nastasi, Michael. / Ion-irradiation enhanced epitaxial growth of sol-gel TiO2 films. In: Applied Physics A: Materials Science and Processing. 2011 ; Vol. 103, No. 1. pp. 179-184.
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