Ion-induced formation of stable and metastable phases in the Y-Si system

T. L. Alford, P. Børgesen, J. W. Mayer, D. A. Lilienfeld

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Bilayers of yttrium and amorphous silicon have been irradiated with 60 keV inert ions. Between liquid-nitrogen temperature and 100°C, ion mixing resulted in an amorphous alloy of Y and Si. For temperatures of 125-190°C, we observed formation of the YSi phase. YSi is not formed during thermal anneals of bilayers. Ion mixing at higher temperatures (≥205°C) results in the formation of the stable YSi1.7 phase. Such sequential silicide formation has not been observed for comparable rare-earth silicides. The minimum temperatures for ion-induced YSi1.7 formation agrees with the prediction by a simple model which correlates vacancy mobility to phase transformation. The YSi formation temperature is associated with the onset of radiation-enhanced diffusion. This temperature does not correlate well with the prediction of the model, but agrees with a scaling based on the average cohesive energy.

Original languageEnglish (US)
Pages (from-to)1848-1850
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - 1991
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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