Ion-implanted amorphous silicon studied by variable coherence TEM

J. Y. Cheng, J. M. Gibson, P. M. Voyles, Michael Treacy, D. C. Jacobson

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations

Abstract

Amorphous silicon formed by ion-implantation of crystalline silicon is investigated with the use of VC-TEM (variable-coherence transmission electron microscopy). This technique is sensitive to medium-range-order structures. The results from high-energy Si implanted samples showed a striking similarity to sputtered amorphous silicon. We found that both ion-implanted and sputtered samples have paracrystalline structures, rather than the expected continuous random network (CRN). We also observed the structural relaxation of the ion-implanted amorphous silicon after ex-situ thermal annealing towards the random network. The more disordered structures are favored and a large heat of relaxation is released as the temperature increases. Finally, we show some preliminary results on the structural variation with the sample depth.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Pages247-252
Number of pages6
Volume589
StatePublished - 2000
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Cheng, J. Y., Gibson, J. M., Voyles, P. M., Treacy, M., & Jacobson, D. C. (2000). Ion-implanted amorphous silicon studied by variable coherence TEM. In Materials Research Society Symposium - Proceedings (Vol. 589, pp. 247-252)