Ion beam mixing in ZnSe/CdZnSe strained layer structures

R. Morton, F. Deng, S. S. Lau, S. Xin, J. K. Furdyna, J. W. Hutchins, Brian Skromme, J. W. Mayer

Research output: Contribution to journalArticlepeer-review

Abstract

Ion beam mixing of ZnSe/CdZnSe strained layer structures, a possible material system for the fabrication of blue laser diodes, has been investigated as a function of ion irradiation temperature and dose. The ion-induced damage showed an inverse temperature dependence when compared to the trend normally observed in semiconductor materials in that the damage was smaller for LN2 (77 K) temperature implants than those performed at 150°C. At the temperatures required to maintain good crystal quality (temperatures above the 300°C growth temperature) intermixing due to thermal diffusion occurs. The implantation process degrades the optical quality of the material, which also limits the use of ion mixing as a viable technique for photonic device fabrication in this II-VI system.

Original languageEnglish (US)
Pages (from-to)704-708
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume118
Issue number1-4
DOIs
StatePublished - Sep 1996

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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