TY - JOUR
T1 - Ion beam analysis of silver thin films on cobalt silicides
AU - Alford, Terry
AU - Mitan, M. M.
AU - Govindasamy, R.
AU - Mayer, J. W.
N1 - Funding Information:
The work was partially supported by The Center for Low Power Electronics provided by NSF, The State of Arizona, Analog Devices, Analogy, Burr Brown, Hughes Aircraft, Intel, Microchip, Motorola, National Semiconductor, Rockwell, Scientific Monitoring, Texas Instruments, and Western Design.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2004/6
Y1 - 2004/6
N2 - Using a bilayer technique, cobalt disilicide films were grown on (100) silicon. Silver thin films were subsequently deposited on the silicide layers for evaluation of their thermal stability during vacuum annealing. Rutherford backscattering spectrometry of the annealed films reveals film coarsening at 400 °C after which no changes are intelligible until 700 °C. Scanning electron microscopy of annealed films also shows grain coarsening of the Ag film with increasing anneal temperature. At 650 °C, voids begin to appear in the film. Complete film agglomeration occurs at 700 °C. X-ray diffraction glancing angle scans show no phase changes in the annealed films. Scans from the as-deposited case and the 700 °C, both contain the same reflection peaks. Secondary ion mass spectroscopy depth profiling reveals trace amounts of Ag at the silicide/silicon interface following any amount of heat treatment. Equal amounts of Ag were discovered at the silicide interfaces for all samples annealed from 450 to 700 °C.
AB - Using a bilayer technique, cobalt disilicide films were grown on (100) silicon. Silver thin films were subsequently deposited on the silicide layers for evaluation of their thermal stability during vacuum annealing. Rutherford backscattering spectrometry of the annealed films reveals film coarsening at 400 °C after which no changes are intelligible until 700 °C. Scanning electron microscopy of annealed films also shows grain coarsening of the Ag film with increasing anneal temperature. At 650 °C, voids begin to appear in the film. Complete film agglomeration occurs at 700 °C. X-ray diffraction glancing angle scans show no phase changes in the annealed films. Scans from the as-deposited case and the 700 °C, both contain the same reflection peaks. Secondary ion mass spectroscopy depth profiling reveals trace amounts of Ag at the silicide/silicon interface following any amount of heat treatment. Equal amounts of Ag were discovered at the silicide interfaces for all samples annealed from 450 to 700 °C.
KW - Cobalt silicides
KW - Metallization
KW - Rutherford backscattering spectrometry
KW - Secondary ion mass spectroscopy
KW - Silver
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U2 - 10.1016/j.nimb.2004.01.184
DO - 10.1016/j.nimb.2004.01.184
M3 - Conference article
AN - SCOPUS:2342481732
SN - 0168-583X
VL - 219-220
SP - 897
EP - 901
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1-4
T2 - Proceedings of the Sixteenth International Conference on Ion
Y2 - 29 June 2003 through 4 July 2003
ER -