Ion beam analysis applied to new and innovative technologies

D. C. Thompson, H. C. Kim, Terry Alford, J. W. Mayer

Research output: Contribution to journalConference article

Abstract

Ion beam analysis is used to analyze nickel and cobalt silicides formed in a cavity applicator microwave system with a magnetron power of 1200 W and a frequency of 2.45 GHz. Rutherford backscattering spectrometry, X-ray diffraction, four point probe measurements and rump simulation software are used to identify the silicide species present, phases, resistivities and layer thicknesses in samples processed in air, argon and evacuated mediums. Rutherford backscattering spectrometry is also used to confirm that the heating mechanism of the samples in microwaves appears not differ appreciably from that of conventional annealing. Electrical resistivity is used to explain microwave power absorption and demonstrate how to tailor a robust process in which thin film reactions can be attained.

Original languageEnglish (US)
Pages (from-to)968-972
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume219-220
Issue number1-4
DOIs
StatePublished - Jun 1 2004
EventProceedings of the Sixteenth International Conference on Ion - Albuquerque, NM., United States
Duration: Jun 29 2003Jul 4 2003

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Keywords

  • Microwaves
  • Rutherford backscattering spectrometry
  • Silicides

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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