Abstract

Ion beam analysis is used to analyze nickel and cobalt silicides formed in a cavity applicator microwave system with a magnetron power of 1200 W and a frequency of 2.45 GHz. Rutherford backscattering spectrometry, X-ray diffraction, four point probe measurements and rump simulation software are used to identify the silicide species present, phases, resistivities and layer thicknesses in samples processed in air, argon and evacuated mediums. Rutherford backscattering spectrometry is also used to confirm that the heating mechanism of the samples in microwaves appears not differ appreciably from that of conventional annealing. Electrical resistivity is used to explain microwave power absorption and demonstrate how to tailor a robust process in which thin film reactions can be attained.

Original languageEnglish (US)
Pages (from-to)968-972
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume219-220
Issue number1-4
DOIs
StatePublished - Jun 2004

Fingerprint

Ion beams
ion beams
Microwaves
Rutherford backscattering spectroscopy
microwaves
Spectrometry
backscattering
Silicides
Applicators
electrical resistivity
silicides
Argon
Cobalt
Nickel
x ray spectroscopy
cobalt
argon
nickel
Annealing
computer programs

Keywords

  • Microwaves
  • Rutherford backscattering spectrometry
  • Silicides

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Ion beam analysis applied to new and innovative technologies. / Thompson, D. C.; Kim, H. C.; Alford, Terry; Mayer, J. W.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 219-220, No. 1-4, 06.2004, p. 968-972.

Research output: Contribution to journalArticle

@article{0f09bbe509ed4ccbad0113c625df80e3,
title = "Ion beam analysis applied to new and innovative technologies",
abstract = "Ion beam analysis is used to analyze nickel and cobalt silicides formed in a cavity applicator microwave system with a magnetron power of 1200 W and a frequency of 2.45 GHz. Rutherford backscattering spectrometry, X-ray diffraction, four point probe measurements and rump simulation software are used to identify the silicide species present, phases, resistivities and layer thicknesses in samples processed in air, argon and evacuated mediums. Rutherford backscattering spectrometry is also used to confirm that the heating mechanism of the samples in microwaves appears not differ appreciably from that of conventional annealing. Electrical resistivity is used to explain microwave power absorption and demonstrate how to tailor a robust process in which thin film reactions can be attained.",
keywords = "Microwaves, Rutherford backscattering spectrometry, Silicides",
author = "Thompson, {D. C.} and Kim, {H. C.} and Terry Alford and Mayer, {J. W.}",
year = "2004",
month = "6",
doi = "10.1016/j.nimb.2004.01.198",
language = "English (US)",
volume = "219-220",
pages = "968--972",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Ion beam analysis applied to new and innovative technologies

AU - Thompson, D. C.

AU - Kim, H. C.

AU - Alford, Terry

AU - Mayer, J. W.

PY - 2004/6

Y1 - 2004/6

N2 - Ion beam analysis is used to analyze nickel and cobalt silicides formed in a cavity applicator microwave system with a magnetron power of 1200 W and a frequency of 2.45 GHz. Rutherford backscattering spectrometry, X-ray diffraction, four point probe measurements and rump simulation software are used to identify the silicide species present, phases, resistivities and layer thicknesses in samples processed in air, argon and evacuated mediums. Rutherford backscattering spectrometry is also used to confirm that the heating mechanism of the samples in microwaves appears not differ appreciably from that of conventional annealing. Electrical resistivity is used to explain microwave power absorption and demonstrate how to tailor a robust process in which thin film reactions can be attained.

AB - Ion beam analysis is used to analyze nickel and cobalt silicides formed in a cavity applicator microwave system with a magnetron power of 1200 W and a frequency of 2.45 GHz. Rutherford backscattering spectrometry, X-ray diffraction, four point probe measurements and rump simulation software are used to identify the silicide species present, phases, resistivities and layer thicknesses in samples processed in air, argon and evacuated mediums. Rutherford backscattering spectrometry is also used to confirm that the heating mechanism of the samples in microwaves appears not differ appreciably from that of conventional annealing. Electrical resistivity is used to explain microwave power absorption and demonstrate how to tailor a robust process in which thin film reactions can be attained.

KW - Microwaves

KW - Rutherford backscattering spectrometry

KW - Silicides

UR - http://www.scopus.com/inward/record.url?scp=2342598347&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342598347&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2004.01.198

DO - 10.1016/j.nimb.2004.01.198

M3 - Article

AN - SCOPUS:2342598347

VL - 219-220

SP - 968

EP - 972

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -