Invited paper: Flexible cmos and electrophoretic displays

David R. Allee, Sameer Venugopal, Roshith Krishna, Korhan Kaftanoglu, Manuel A. Quevedo-Lopez, Shrinivas Gowrisanker, Adrianno E. Avendano-Bolivar, Husam N. Alshareef, Bruce Gnade

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

Flexible CMOS has been achieved by combining nMOS a-Si:H with pMOS pentacene thin film transistors on a plastic substrate. Flexible CMOS enables more than 300x reduction in power consumption for integrated source drivers for an electrophoretic display compared to a-Si:H only source drivers. Importantly, flexible CMOS reduces the source driver power well below the power required by the electrophoretic display backplane greatly extending battery life. Measurements on the electrical stress induced degradation of flexible CMOS logic gates are also presented.

Original languageEnglish (US)
Pages (from-to)760-763
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume40
Issue number1
DOIs
StatePublished - Jan 1 2009
Externally publishedYes
Event2009 Vehicles and Photons Symposium - Dearborn, MI, United States
Duration: Oct 15 2009Oct 16 2009

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Allee, D. R., Venugopal, S., Krishna, R., Kaftanoglu, K., Quevedo-Lopez, M. A., Gowrisanker, S., Avendano-Bolivar, A. E., Alshareef, H. N., & Gnade, B. (2009). Invited paper: Flexible cmos and electrophoretic displays. Digest of Technical Papers - SID International Symposium, 40(1), 760-763. https://doi.org/10.1889/1.3256899