Abstract

In this paper we present modeling reliability concerns in GaN HEMT technology. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied gate voltage. To model self-heating effects, an elec-tro-thermal device simulator was developed that couples the Monte Carlo-Poisson solver with the energy balance solver for the acoustic and optical phonons. Current collapse was explained as charging the surface states due the Paul-Frenkel tunneling from the gate into the gate to drain extension. Excellent agreement is obtained between the theoretical calculations and the experimental data of the unstressed and the stressed devices with this model.

Original languageEnglish (US)
Title of host publication2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages32-37
Number of pages6
ISBN (Print)9781479903504
DOIs
StatePublished - Jan 1 2013
Event2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 - South Lake Tahoe, CA, United States
Duration: Oct 13 2013Oct 17 2013

Publication series

NameIEEE International Integrated Reliability Workshop Final Report

Other

Other2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/13/1310/17/13

Keywords

  • GaN HEMTs
  • current collapse
  • inverse piezoelectric effect
  • reliability modeling
  • self-heating

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Vasileska, D. (2013). (Invited) Modeling reliability in GaN HEMTs. In 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 (pp. 32-37). [6804150] (IEEE International Integrated Reliability Workshop Final Report). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2013.6804150