Investigation of ultraviolet response enhanced PV cell with silicon-based SINP configuration

Bo He; Zhong Quan Ma; Lei Zhao; Nan Sheng Zhang; Feng Li; Cheng Shen; Ling Shen; Cheng Yue Zhou; Zheng Shan Yu; Yan Ting Yin

doi:10.1007/s11431-009-0388-6

Investigation of ultraviolet response enhanced PV cell with silicon-based SINP configuration

Bo He, Zhong Quan Ma, Lei Zhao, Nan Sheng Zhang, Feng Li, Cheng Shen, Ling Shen, Cheng Yue Zhou, Zheng Shan Yu, Yan Ting Yin

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this study, we report on the realization of ultraviolet response enhancement in PV cells through the structure of ITO/SiO₂/np-Silicon frame (named as SINP), which was fabricated by the state of the art processing. The fabrication process consists of thermal diffusion of phosphorus element into p-type texturized crystal Si wafer, thermal deposition of an ultra-thin silicon dioxide layer (15-20A) at low temperature, and subsequent deposition of thick In₂O₃:SnO₂ (ITO) layer by RF sputtering. The structure, morphology, optical and electric properties of the ITO film were characterized by XRD, SEM, UV-VIS spectrophotometer and Hall effect measurement, respectively. The results showed that ITO film possesses high quality in terms of antireflection and electrode functions. The device parameters derived from current-voltage (I-V) relationship under different conditions, spectral response and responsivity of the ultraviolet photoelectric cell with SINP configuration were analyzed in detail. We found that the main feature of our PV cell is the enhanced ultraviolet response and optoelectronic conversion. The improved short-circuit current, open-circuit voltage, and filled factor indicate that the device is promising to be developed into an ultraviolet and blue enhanced photovoltaic device in the future.

Original language	English (US)
Pages (from-to)	1028-1037
Number of pages	10
Journal	Science China Technological Sciences
Volume	53
Issue number	4
DOIs	https://doi.org/10.1007/s11431-009-0388-6
State	Published - Apr 2010
Externally published	Yes

Keywords

Current-voltage (I-V) characteristics
ITO
Responsivity
SINP photovoltaic device
Spectral response

ASJC Scopus subject areas

General Materials Science
General Engineering

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10.1007/s11431-009-0388-6

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@article{8a40e9e4b007405a804a0b3120e76d25,

title = "Investigation of ultraviolet response enhanced PV cell with silicon-based SINP configuration",

abstract = "In this study, we report on the realization of ultraviolet response enhancement in PV cells through the structure of ITO/SiO2/np-Silicon frame (named as SINP), which was fabricated by the state of the art processing. The fabrication process consists of thermal diffusion of phosphorus element into p-type texturized crystal Si wafer, thermal deposition of an ultra-thin silicon dioxide layer (15-20A) at low temperature, and subsequent deposition of thick In2O3:SnO2 (ITO) layer by RF sputtering. The structure, morphology, optical and electric properties of the ITO film were characterized by XRD, SEM, UV-VIS spectrophotometer and Hall effect measurement, respectively. The results showed that ITO film possesses high quality in terms of antireflection and electrode functions. The device parameters derived from current-voltage (I-V) relationship under different conditions, spectral response and responsivity of the ultraviolet photoelectric cell with SINP configuration were analyzed in detail. We found that the main feature of our PV cell is the enhanced ultraviolet response and optoelectronic conversion. The improved short-circuit current, open-circuit voltage, and filled factor indicate that the device is promising to be developed into an ultraviolet and blue enhanced photovoltaic device in the future.",

keywords = "Current-voltage (I-V) characteristics, ITO, Responsivity, SINP photovoltaic device, Spectral response",

author = "Bo He and Ma, {Zhong Quan} and Lei Zhao and Zhang, {Nan Sheng} and Feng Li and Cheng Shen and Ling Shen and Zhou, {Cheng Yue} and Yu, {Zheng Shan} and Yin, {Yan Ting}",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 60876045), Shanghai Leading Academic Discipline Project (Grant No. S30105), Innovation Foundation of Shanghai Education Committee (Grant No. 08YZ12), R&D Foundation of SHU-SOENs PV Joint Lab (Grant No. SS-E0700601). The authors wish to thank Prof. YAN YanFa (Senior Staff Scientist, National Center for Photovoltaic, National Renewable Energy Laboratory (NREL), USA) for his assistance.",

year = "2010",

month = apr,

doi = "10.1007/s11431-009-0388-6",

language = "English (US)",

volume = "53",

pages = "1028--1037",

journal = "Science China Technological Sciences",

issn = "1674-7321",

publisher = "Science China Press",

number = "4",

}

TY - JOUR

T1 - Investigation of ultraviolet response enhanced PV cell with silicon-based SINP configuration

AU - He, Bo

AU - Ma, Zhong Quan

AU - Zhao, Lei

AU - Zhang, Nan Sheng

AU - Li, Feng

AU - Shen, Cheng

AU - Shen, Ling

AU - Zhou, Cheng Yue

AU - Yu, Zheng Shan

AU - Yin, Yan Ting

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 60876045), Shanghai Leading Academic Discipline Project (Grant No. S30105), Innovation Foundation of Shanghai Education Committee (Grant No. 08YZ12), R&D Foundation of SHU-SOENs PV Joint Lab (Grant No. SS-E0700601). The authors wish to thank Prof. YAN YanFa (Senior Staff Scientist, National Center for Photovoltaic, National Renewable Energy Laboratory (NREL), USA) for his assistance.

PY - 2010/4

Y1 - 2010/4

N2 - In this study, we report on the realization of ultraviolet response enhancement in PV cells through the structure of ITO/SiO2/np-Silicon frame (named as SINP), which was fabricated by the state of the art processing. The fabrication process consists of thermal diffusion of phosphorus element into p-type texturized crystal Si wafer, thermal deposition of an ultra-thin silicon dioxide layer (15-20A) at low temperature, and subsequent deposition of thick In2O3:SnO2 (ITO) layer by RF sputtering. The structure, morphology, optical and electric properties of the ITO film were characterized by XRD, SEM, UV-VIS spectrophotometer and Hall effect measurement, respectively. The results showed that ITO film possesses high quality in terms of antireflection and electrode functions. The device parameters derived from current-voltage (I-V) relationship under different conditions, spectral response and responsivity of the ultraviolet photoelectric cell with SINP configuration were analyzed in detail. We found that the main feature of our PV cell is the enhanced ultraviolet response and optoelectronic conversion. The improved short-circuit current, open-circuit voltage, and filled factor indicate that the device is promising to be developed into an ultraviolet and blue enhanced photovoltaic device in the future.

AB - In this study, we report on the realization of ultraviolet response enhancement in PV cells through the structure of ITO/SiO2/np-Silicon frame (named as SINP), which was fabricated by the state of the art processing. The fabrication process consists of thermal diffusion of phosphorus element into p-type texturized crystal Si wafer, thermal deposition of an ultra-thin silicon dioxide layer (15-20A) at low temperature, and subsequent deposition of thick In2O3:SnO2 (ITO) layer by RF sputtering. The structure, morphology, optical and electric properties of the ITO film were characterized by XRD, SEM, UV-VIS spectrophotometer and Hall effect measurement, respectively. The results showed that ITO film possesses high quality in terms of antireflection and electrode functions. The device parameters derived from current-voltage (I-V) relationship under different conditions, spectral response and responsivity of the ultraviolet photoelectric cell with SINP configuration were analyzed in detail. We found that the main feature of our PV cell is the enhanced ultraviolet response and optoelectronic conversion. The improved short-circuit current, open-circuit voltage, and filled factor indicate that the device is promising to be developed into an ultraviolet and blue enhanced photovoltaic device in the future.

KW - Current-voltage (I-V) characteristics

KW - ITO

KW - Responsivity

KW - SINP photovoltaic device

KW - Spectral response

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U2 - 10.1007/s11431-009-0388-6

DO - 10.1007/s11431-009-0388-6

M3 - Article

AN - SCOPUS:77953614342

SN - 1674-7321

VL - 53

SP - 1028

EP - 1037

JO - Science China Technological Sciences

JF - Science China Technological Sciences

IS - 4

ER -

Investigation of ultraviolet response enhanced PV cell with silicon-based SINP configuration

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Keywords

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