TY - JOUR
T1 - Investigation of ultraviolet response enhanced PV cell with silicon-based SINP configuration
AU - He, Bo
AU - Ma, Zhong Quan
AU - Zhao, Lei
AU - Zhang, Nan Sheng
AU - Li, Feng
AU - Shen, Cheng
AU - Shen, Ling
AU - Zhou, Cheng Yue
AU - Yu, Zheng Shan
AU - Yin, Yan Ting
N1 - Funding Information:
This work was supported by the National Natural Science Foundation of China (Grant No. 60876045), Shanghai Leading Academic Discipline Project (Grant No. S30105), Innovation Foundation of Shanghai Education Committee (Grant No. 08YZ12), R&D Foundation of SHU-SOENs PV Joint Lab (Grant No. SS-E0700601). The authors wish to thank Prof. YAN YanFa (Senior Staff Scientist, National Center for Photovoltaic, National Renewable Energy Laboratory (NREL), USA) for his assistance.
PY - 2010/4
Y1 - 2010/4
N2 - In this study, we report on the realization of ultraviolet response enhancement in PV cells through the structure of ITO/SiO2/np-Silicon frame (named as SINP), which was fabricated by the state of the art processing. The fabrication process consists of thermal diffusion of phosphorus element into p-type texturized crystal Si wafer, thermal deposition of an ultra-thin silicon dioxide layer (15-20A) at low temperature, and subsequent deposition of thick In2O3:SnO2 (ITO) layer by RF sputtering. The structure, morphology, optical and electric properties of the ITO film were characterized by XRD, SEM, UV-VIS spectrophotometer and Hall effect measurement, respectively. The results showed that ITO film possesses high quality in terms of antireflection and electrode functions. The device parameters derived from current-voltage (I-V) relationship under different conditions, spectral response and responsivity of the ultraviolet photoelectric cell with SINP configuration were analyzed in detail. We found that the main feature of our PV cell is the enhanced ultraviolet response and optoelectronic conversion. The improved short-circuit current, open-circuit voltage, and filled factor indicate that the device is promising to be developed into an ultraviolet and blue enhanced photovoltaic device in the future.
AB - In this study, we report on the realization of ultraviolet response enhancement in PV cells through the structure of ITO/SiO2/np-Silicon frame (named as SINP), which was fabricated by the state of the art processing. The fabrication process consists of thermal diffusion of phosphorus element into p-type texturized crystal Si wafer, thermal deposition of an ultra-thin silicon dioxide layer (15-20A) at low temperature, and subsequent deposition of thick In2O3:SnO2 (ITO) layer by RF sputtering. The structure, morphology, optical and electric properties of the ITO film were characterized by XRD, SEM, UV-VIS spectrophotometer and Hall effect measurement, respectively. The results showed that ITO film possesses high quality in terms of antireflection and electrode functions. The device parameters derived from current-voltage (I-V) relationship under different conditions, spectral response and responsivity of the ultraviolet photoelectric cell with SINP configuration were analyzed in detail. We found that the main feature of our PV cell is the enhanced ultraviolet response and optoelectronic conversion. The improved short-circuit current, open-circuit voltage, and filled factor indicate that the device is promising to be developed into an ultraviolet and blue enhanced photovoltaic device in the future.
KW - Current-voltage (I-V) characteristics
KW - ITO
KW - Responsivity
KW - SINP photovoltaic device
KW - Spectral response
UR - http://www.scopus.com/inward/record.url?scp=77953614342&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77953614342&partnerID=8YFLogxK
U2 - 10.1007/s11431-009-0388-6
DO - 10.1007/s11431-009-0388-6
M3 - Article
AN - SCOPUS:77953614342
SN - 1674-7321
VL - 53
SP - 1028
EP - 1037
JO - Science China Technological Sciences
JF - Science China Technological Sciences
IS - 4
ER -