Investigation of thermal stability, phase formation, electrical, and microstructural properties of sputter-deposited titanium aluminide thin films

H. C. Kim, N. D. Theodore, K. S. Gadre, J. W. Mayer, Terry Alford

Research output: Contribution to journalArticle

18 Scopus citations


Titanium aluminide thin films are being considered as coating materials for high temperature applications due to their high melting points and high oxidation resistance. In this study, Ti37Al63 and Ti 53Al47 thin films are deposited onto SiO2 substrates by RF magnetron sputtering using compound targets and then annealed in vacuum to investigate the properties of the films. Rutherford backscattering spectrometry, X-ray diffractometry, transmission electron microscopy, and four-point probe measurements are used to analyze the characteristics of Ti 37Al63 and Ti53Al47 thin films for high temperature electronics applications. The films show good thermal stability up to 700 °C for 1 h in vacuum. Reasonable resistivity is obtained when appropriate compositions and anneal conditions are used.

Original languageEnglish (US)
Pages (from-to)17-24
Number of pages8
JournalThin Solid Films
Issue number1-2
StatePublished - Jul 22 2004



  • Characterization
  • Sputtering
  • Thermal stability
  • Titanium aluminide thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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