Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices

S. Strite, D. S L Mui, G. Martin, Z. Li, David Smith, H. Morkog

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Cubic GaN is a wide bandgap semiconductor with potentially useful applications as a an insulator or passivation layer for GaAs-based devices. The authors present the first comprehensive investigation of the insulating and structural properties of cubic GaN for applications in GaN-GaAs semiconductor-insulator-semiconductor and metal-insulator-semiconductor diode structures.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by IOP Publishing Ltd
Pages89-93
Number of pages5
ISBN (Print)0854984100
StatePublished - Dec 1 1991
EventProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds - Seattle, WA, USA
Duration: Sep 9 1991Sep 12 1991

Publication series

NameInstitute of Physics Conference Series
Volume120
ISSN (Print)0951-3248

Other

OtherProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds
CitySeattle, WA, USA
Period9/9/919/12/91

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Strite, S., Mui, D. S. L., Martin, G., Li, Z., Smith, D., & Morkog, H. (1991). Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices. In Institute of Physics Conference Series (pp. 89-93). (Institute of Physics Conference Series; Vol. 120). Publ by IOP Publishing Ltd.