Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices

S. Strite, D. S L Mui, G. Martin, Z. Li, David Smith, H. Morkog

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Scopus citations

    Abstract

    Cubic GaN is a wide bandgap semiconductor with potentially useful applications as a an insulator or passivation layer for GaAs-based devices. The authors present the first comprehensive investigation of the insulating and structural properties of cubic GaN for applications in GaN-GaAs semiconductor-insulator-semiconductor and metal-insulator-semiconductor diode structures.

    Original languageEnglish (US)
    Title of host publicationInstitute of Physics Conference Series
    PublisherPubl by IOP Publishing Ltd
    Pages89-93
    Number of pages5
    ISBN (Print)0854984100
    StatePublished - Dec 1 1991
    EventProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds - Seattle, WA, USA
    Duration: Sep 9 1991Sep 12 1991

    Publication series

    NameInstitute of Physics Conference Series
    Volume120
    ISSN (Print)0951-3248

    Other

    OtherProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds
    CitySeattle, WA, USA
    Period9/9/919/12/91

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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