Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices

S. Strite; D. S L Mui; G. Martin; Z. Li; David Smith; H. Morkog

Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices

S. Strite, D. S L Mui, G. Martin, Z. Li, David Smith, H. Morkog

CLAS-NS: Solid State Science, LeRoy Eyring Center for (CSSS)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Cubic GaN is a wide bandgap semiconductor with potentially useful applications as a an insulator or passivation layer for GaAs-based devices. The authors present the first comprehensive investigation of the insulating and structural properties of cubic GaN for applications in GaN-GaAs semiconductor-insulator-semiconductor and metal-insulator-semiconductor diode structures.

Original language	English (US)
Title of host publication	Institute of Physics Conference Series
Publisher	Publ by IOP Publishing Ltd
Pages	89-93
Number of pages	5
ISBN (Print)	0854984100
State	Published - Dec 1 1991
Event	Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds - Seattle, WA, USA Duration: Sep 9 1991 → Sep 12 1991

Publication series

Name	Institute of Physics Conference Series
Volume	120
ISSN (Print)	0951-3248

Other

Other	Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds
City	Seattle, WA, USA
Period	9/9/91 → 9/12/91

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

Fingerprint Dive into the research topics of 'Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices'. Together they form a unique fingerprint.

Cite this

Strite, S., Mui, D. S. L., Martin, G., Li, Z., Smith, D., & Morkog, H. (1991). Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices. In Institute of Physics Conference Series (pp. 89-93). (Institute of Physics Conference Series; Vol. 120). Publ by IOP Publishing Ltd.

Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices. / Strite, S.; Mui, D. S L; Martin, G.; Li, Z.; Smith, David; Morkog, H.

Institute of Physics Conference Series. Publ by IOP Publishing Ltd, 1991. p. 89-93 (Institute of Physics Conference Series; Vol. 120).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Strite, S, Mui, DSL, Martin, G, Li, Z, Smith, D & Morkog, H 1991, Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices. in Institute of Physics Conference Series. Institute of Physics Conference Series, vol. 120, Publ by IOP Publishing Ltd, pp. 89-93, Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds, Seattle, WA, USA, 9/9/91.

@inproceedings{6ff6ba25b86543f690e7255d0c5520bc,

title = "Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices",

abstract = "Cubic GaN is a wide bandgap semiconductor with potentially useful applications as a an insulator or passivation layer for GaAs-based devices. The authors present the first comprehensive investigation of the insulating and structural properties of cubic GaN for applications in GaN-GaAs semiconductor-insulator-semiconductor and metal-insulator-semiconductor diode structures.",

author = "S. Strite and Mui, {D. S L} and G. Martin and Z. Li and David Smith and H. Morkog",

year = "1991",

month = dec,

day = "1",

language = "English (US)",

isbn = "0854984100",

series = "Institute of Physics Conference Series",

publisher = "Publ by IOP Publishing Ltd",

pages = "89--93",

booktitle = "Institute of Physics Conference Series",

note = "Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds ; Conference date: 09-09-1991 Through 12-09-1991",

}

TY - GEN

T1 - Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices

AU - Strite, S.

AU - Mui, D. S L

AU - Martin, G.

AU - Li, Z.

AU - Smith, David

AU - Morkog, H.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - Cubic GaN is a wide bandgap semiconductor with potentially useful applications as a an insulator or passivation layer for GaAs-based devices. The authors present the first comprehensive investigation of the insulating and structural properties of cubic GaN for applications in GaN-GaAs semiconductor-insulator-semiconductor and metal-insulator-semiconductor diode structures.

AB - Cubic GaN is a wide bandgap semiconductor with potentially useful applications as a an insulator or passivation layer for GaAs-based devices. The authors present the first comprehensive investigation of the insulating and structural properties of cubic GaN for applications in GaN-GaAs semiconductor-insulator-semiconductor and metal-insulator-semiconductor diode structures.

UR - http://www.scopus.com/inward/record.url?scp=0026367586&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026367586&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0026367586

SN - 0854984100

T3 - Institute of Physics Conference Series

SP - 89

EP - 93

BT - Institute of Physics Conference Series

PB - Publ by IOP Publishing Ltd

T2 - Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds

Y2 - 9 September 1991 through 12 September 1991

ER -