Abstract
Cubic GaN is a wide bandgap semiconductor with potentially useful applications as a an insulator or passivation layer for GaAs-based devices. The authors present the first comprehensive investigation of the insulating and structural properties of cubic GaN for applications in GaN-GaAs semiconductor-insulator-semiconductor and metal-insulator-semiconductor diode structures.
| Original language | English (US) |
|---|---|
| Title of host publication | Institute of Physics Conference Series |
| Place of Publication | Bristol, United Kingdom |
| Publisher | Publ by IOP Publishing Ltd |
| Pages | 89-93 |
| Number of pages | 5 |
| Volume | 120 |
| ISBN (Print) | 0854984100 |
| State | Published - 1991 |
| Event | Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds - Seattle, WA, USA Duration: Sep 9 1991 → Sep 12 1991 |
Other
| Other | Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds |
|---|---|
| City | Seattle, WA, USA |
| Period | 9/9/91 → 9/12/91 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices. / Strite, S.; Mui, D. S L; Martin, G.; Li, Z.; Smith, David; Morkog, H.
Institute of Physics Conference Series. Vol. 120 Bristol, United Kingdom : Publ by IOP Publishing Ltd, 1991. p. 89-93.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices
AU - Strite, S.
AU - Mui, D. S L
AU - Martin, G.
AU - Li, Z.
AU - Smith, David
AU - Morkog, H.
PY - 1991
Y1 - 1991
N2 - Cubic GaN is a wide bandgap semiconductor with potentially useful applications as a an insulator or passivation layer for GaAs-based devices. The authors present the first comprehensive investigation of the insulating and structural properties of cubic GaN for applications in GaN-GaAs semiconductor-insulator-semiconductor and metal-insulator-semiconductor diode structures.
AB - Cubic GaN is a wide bandgap semiconductor with potentially useful applications as a an insulator or passivation layer for GaAs-based devices. The authors present the first comprehensive investigation of the insulating and structural properties of cubic GaN for applications in GaN-GaAs semiconductor-insulator-semiconductor and metal-insulator-semiconductor diode structures.
UR - http://www.scopus.com/inward/record.url?scp=0026367586&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026367586&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0026367586
SN - 0854984100
VL - 120
SP - 89
EP - 93
BT - Institute of Physics Conference Series
PB - Publ by IOP Publishing Ltd
CY - Bristol, United Kingdom
ER -