Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices

S. Strite, D. S L Mui, G. Martin, Z. Li, David Smith, H. Morkog

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Cubic GaN is a wide bandgap semiconductor with potentially useful applications as a an insulator or passivation layer for GaAs-based devices. The authors present the first comprehensive investigation of the insulating and structural properties of cubic GaN for applications in GaN-GaAs semiconductor-insulator-semiconductor and metal-insulator-semiconductor diode structures.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
Place of PublicationBristol, United Kingdom
PublisherPubl by IOP Publishing Ltd
Pages89-93
Number of pages5
Volume120
ISBN (Print)0854984100
StatePublished - 1991
EventProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds - Seattle, WA, USA
Duration: Sep 9 1991Sep 12 1991

Other

OtherProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds
CitySeattle, WA, USA
Period9/9/919/12/91

Fingerprint

SIS (semiconductors)
insulators
semiconductor diodes
MIS (semiconductors)
passivity

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Strite, S., Mui, D. S. L., Martin, G., Li, Z., Smith, D., & Morkog, H. (1991). Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices. In Institute of Physics Conference Series (Vol. 120, pp. 89-93). Bristol, United Kingdom: Publ by IOP Publishing Ltd.

Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices. / Strite, S.; Mui, D. S L; Martin, G.; Li, Z.; Smith, David; Morkog, H.

Institute of Physics Conference Series. Vol. 120 Bristol, United Kingdom : Publ by IOP Publishing Ltd, 1991. p. 89-93.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Strite, S, Mui, DSL, Martin, G, Li, Z, Smith, D & Morkog, H 1991, Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices. in Institute of Physics Conference Series. vol. 120, Publ by IOP Publishing Ltd, Bristol, United Kingdom, pp. 89-93, Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds, Seattle, WA, USA, 9/9/91.
Strite S, Mui DSL, Martin G, Li Z, Smith D, Morkog H. Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices. In Institute of Physics Conference Series. Vol. 120. Bristol, United Kingdom: Publ by IOP Publishing Ltd. 1991. p. 89-93
Strite, S. ; Mui, D. S L ; Martin, G. ; Li, Z. ; Smith, David ; Morkog, H. / Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices. Institute of Physics Conference Series. Vol. 120 Bristol, United Kingdom : Publ by IOP Publishing Ltd, 1991. pp. 89-93
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