@inproceedings{6ff6ba25b86543f690e7255d0c5520bc,
title = "Investigation of the structural and insualting properties of cubic GaN for GaAs-GaN semiconductor-insulator devices",
abstract = "Cubic GaN is a wide bandgap semiconductor with potentially useful applications as a an insulator or passivation layer for GaAs-based devices. The authors present the first comprehensive investigation of the insulating and structural properties of cubic GaN for applications in GaN-GaAs semiconductor-insulator-semiconductor and metal-insulator-semiconductor diode structures.",
author = "S. Strite and Mui, {D. S L} and G. Martin and Z. Li and David Smith and H. Morkog",
year = "1991",
month = dec,
day = "1",
language = "English (US)",
isbn = "0854984100",
series = "Institute of Physics Conference Series",
publisher = "Publ by IOP Publishing Ltd",
pages = "89--93",
booktitle = "Institute of Physics Conference Series",
note = "Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds ; Conference date: 09-09-1991 Through 12-09-1991",
}