Investigation of the structural and electrical properties of Al-Ge-Ni contacts to GaAs

R. J. Graham, R. W. Nelson, Peter Williams, T. B. Haddock, E. P. Baaklini, R. J. Roede

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The microstructure of Al-Ge-Ni ohmic contacts to both n- and p-type GaAs has been investigated by high resolution transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). Electrical assessment of these contacts shows that ohmic contacts with low specific contact resistances are formed on both n- and p-type material and that the thickness of Ge deposited and the alloying time have a large influence over the degree of ohmicity observed, particularly in the case of n-type material. TEM had previously shown the contact interface to be extremely flat and uniform in all cases with a continuous single phase polycrystalline layer of Al3Ni adjacent to the semicon-ductor. SIMS shows that the contact components, especially the Al, diffuse into the un-derlying semiconductor during alloying. The possible reasons for the observed varia-tions in ohmic behaviour as a result of processing are discussed in terms of the microstructure.

Original languageEnglish (US)
Pages (from-to)1257-1263
Number of pages7
JournalJournal of Electronic Materials
Volume19
Issue number11
DOIs
StatePublished - Nov 1 1990

Keywords

  • Al-Ge-Ni contacts
  • GaAs contacts
  • Ohmic contacts

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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