Abstract

Strong correlations between crystal perfection of epitaxial structures and size, density and PL features of deposited InAs QDs have been found. Increase of a Sb composition in GaAsSb strain relief layers from 8% to 37% significantly disturbed crystal perfection of epitaxial structures and increased the density of deposited QDs from 2-2.5 × 10 10 cm -2 at 8% Sb structure to 7.5-9.5 × 10 10 cm -2 at 16% Sb structure. At 37% Sb initial elastic stress was noticeably relaxed (≈ 40%) while creation of QDs was fully blocked. Relaxation of elastic stress strongly increased the density of dislocation loops in epitaxial layers and affected atomic migration on the growth front. Observed correlations between density of dislocation loops and QDs are related with a diminution of the energy of migrated atoms, caused by dislocations. At definite density of dislocation loops, reduced energy diminished accumulation of deposited atoms below the level critical for their transformation to QDs.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages474-479
Number of pages6
DOIs
StatePublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: Jun 19 2011Jun 24 2011

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period6/19/116/24/11

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Semiconductor quantum dots
Atoms
Crystals
Epitaxial layers
Dislocations (crystals)
Chemical analysis

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Investigation of the main correlations between structural and physical propertiess of InAs quantum dots, embedded between strain-relief GaAsSb layers. / Faleev, N.; Ban, K. Y.; Bremner, S.; Smith, David; Honsberg, Christiana.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 474-479 6185996.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Faleev, N, Ban, KY, Bremner, S, Smith, D & Honsberg, C 2011, Investigation of the main correlations between structural and physical propertiess of InAs quantum dots, embedded between strain-relief GaAsSb layers. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6185996, pp. 474-479, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 6/19/11. https://doi.org/10.1109/PVSC.2011.6185996
Faleev, N. ; Ban, K. Y. ; Bremner, S. ; Smith, David ; Honsberg, Christiana. / Investigation of the main correlations between structural and physical propertiess of InAs quantum dots, embedded between strain-relief GaAsSb layers. Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. pp. 474-479
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