Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD

Xianglin Li; James Perkins; Ramon Collazo; Robert J. Nemanich; Zlatko Sitar

doi:10.1016/j.diamond.2006.09.008

Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD

Xianglin Li, James Perkins, Ramon Collazo, Robert J. Nemanich, Zlatko Sitar

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

The influence of total gas pressure (50-125 Torr) and methane concentration (0.75%-10%) on diamond growth by microwave plasma chemical vapor deposition (MPCVD) was investigated. Within the regimes studied, the growth rate was proportional to the methane concentration in the source gas while it exhibited a super-linear dependence on total pressure. For a fixed methane concentration, characterization by Raman spectroscopy, scanning electron microscopy and X-ray diffraction indicated there was a minimum pressure required for the growth of large grain diamond, and conversely, for a fixed pressure, there was a maximum methane concentration that yielded diamond deposition. Higher pressures and higher carbon concentrations yielded diamond growth rates more than 10 times higher than achieved by the conventional low pressure MPCVD process.

Original language	English (US)
Pages (from-to)	1784-1788
Number of pages	5
Journal	Diamond and Related Materials
Volume	15
Issue number	11-12 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.diamond.2006.09.008
State	Published - Nov 2006
Externally published	Yes

Keywords

Diamond growth
High growth rate
Methane concentration dependence
Pressure dependence

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering
General Physics and Astronomy

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10.1016/j.diamond.2006.09.008

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title = "Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD",

abstract = "The influence of total gas pressure (50-125 Torr) and methane concentration (0.75%-10%) on diamond growth by microwave plasma chemical vapor deposition (MPCVD) was investigated. Within the regimes studied, the growth rate was proportional to the methane concentration in the source gas while it exhibited a super-linear dependence on total pressure. For a fixed methane concentration, characterization by Raman spectroscopy, scanning electron microscopy and X-ray diffraction indicated there was a minimum pressure required for the growth of large grain diamond, and conversely, for a fixed pressure, there was a maximum methane concentration that yielded diamond deposition. Higher pressures and higher carbon concentrations yielded diamond growth rates more than 10 times higher than achieved by the conventional low pressure MPCVD process.",

keywords = "Diamond growth, High growth rate, Methane concentration dependence, Pressure dependence",

author = "Xianglin Li and James Perkins and Ramon Collazo and Nemanich, {Robert J.} and Zlatko Sitar",

note = "Funding Information: This research was funded by the Office of Naval Research through the TEC MURI under contract N00014-03-1-0790, monitored by Dr. Mihal Gross. X-ray diffraction measurements were performed by Dr. Richard Chromik at the U.S. Naval Research Laboratory, Washington, DC.",

year = "2006",

month = nov,

doi = "10.1016/j.diamond.2006.09.008",

language = "English (US)",

volume = "15",

pages = "1784--1788",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "11-12 SPEC. ISS.",

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TY - JOUR

T1 - Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD

AU - Li, Xianglin

AU - Perkins, James

AU - Collazo, Ramon

AU - Nemanich, Robert J.

AU - Sitar, Zlatko

N1 - Funding Information: This research was funded by the Office of Naval Research through the TEC MURI under contract N00014-03-1-0790, monitored by Dr. Mihal Gross. X-ray diffraction measurements were performed by Dr. Richard Chromik at the U.S. Naval Research Laboratory, Washington, DC.

PY - 2006/11

Y1 - 2006/11

N2 - The influence of total gas pressure (50-125 Torr) and methane concentration (0.75%-10%) on diamond growth by microwave plasma chemical vapor deposition (MPCVD) was investigated. Within the regimes studied, the growth rate was proportional to the methane concentration in the source gas while it exhibited a super-linear dependence on total pressure. For a fixed methane concentration, characterization by Raman spectroscopy, scanning electron microscopy and X-ray diffraction indicated there was a minimum pressure required for the growth of large grain diamond, and conversely, for a fixed pressure, there was a maximum methane concentration that yielded diamond deposition. Higher pressures and higher carbon concentrations yielded diamond growth rates more than 10 times higher than achieved by the conventional low pressure MPCVD process.

AB - The influence of total gas pressure (50-125 Torr) and methane concentration (0.75%-10%) on diamond growth by microwave plasma chemical vapor deposition (MPCVD) was investigated. Within the regimes studied, the growth rate was proportional to the methane concentration in the source gas while it exhibited a super-linear dependence on total pressure. For a fixed methane concentration, characterization by Raman spectroscopy, scanning electron microscopy and X-ray diffraction indicated there was a minimum pressure required for the growth of large grain diamond, and conversely, for a fixed pressure, there was a maximum methane concentration that yielded diamond deposition. Higher pressures and higher carbon concentrations yielded diamond growth rates more than 10 times higher than achieved by the conventional low pressure MPCVD process.

KW - Diamond growth

KW - High growth rate

KW - Methane concentration dependence

KW - Pressure dependence

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U2 - 10.1016/j.diamond.2006.09.008

DO - 10.1016/j.diamond.2006.09.008

M3 - Article

AN - SCOPUS:33751187553

SN - 0925-9635

VL - 15

SP - 1784

EP - 1788

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 11-12 SPEC. ISS.

ER -

Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD

Abstract

Keywords

ASJC Scopus subject areas

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