Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD

Xianglin Li, James Perkins, Ramon Collazo, Robert J. Nemanich, Zlatko Sitar

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

The influence of total gas pressure (50-125 Torr) and methane concentration (0.75%-10%) on diamond growth by microwave plasma chemical vapor deposition (MPCVD) was investigated. Within the regimes studied, the growth rate was proportional to the methane concentration in the source gas while it exhibited a super-linear dependence on total pressure. For a fixed methane concentration, characterization by Raman spectroscopy, scanning electron microscopy and X-ray diffraction indicated there was a minimum pressure required for the growth of large grain diamond, and conversely, for a fixed pressure, there was a maximum methane concentration that yielded diamond deposition. Higher pressures and higher carbon concentrations yielded diamond growth rates more than 10 times higher than achieved by the conventional low pressure MPCVD process.

Original languageEnglish (US)
Pages (from-to)1784-1788
Number of pages5
JournalDiamond and Related Materials
Volume15
Issue number11-12 SPEC. ISS.
DOIs
StatePublished - Nov 1 2006
Externally publishedYes

Keywords

  • Diamond growth
  • High growth rate
  • Methane concentration dependence
  • Pressure dependence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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