Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD

Xianglin Li, James Perkins, Ramon Collazo, Robert Nemanich, Zlatko Sitar

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The influence of total gas pressure (50-125 Torr) and methane concentration (0.75%-10%) on diamond growth by microwave plasma chemical vapor deposition (MPCVD) was investigated. Within the regimes studied, the growth rate was proportional to the methane concentration in the source gas while it exhibited a super-linear dependence on total pressure. For a fixed methane concentration, characterization by Raman spectroscopy, scanning electron microscopy and X-ray diffraction indicated there was a minimum pressure required for the growth of large grain diamond, and conversely, for a fixed pressure, there was a maximum methane concentration that yielded diamond deposition. Higher pressures and higher carbon concentrations yielded diamond growth rates more than 10 times higher than achieved by the conventional low pressure MPCVD process.

Original languageEnglish (US)
Pages (from-to)1784-1788
Number of pages5
JournalDiamond and Related Materials
Volume15
Issue number11-12 SPEC. ISS.
DOIs
StatePublished - Nov 2006
Externally publishedYes

Fingerprint

Diamond films
Methane
Chemical vapor deposition
Diamond
methane
diamonds
Microwaves
vapor deposition
Plasmas
microwaves
Thin films
Diamonds
thin films
Gases
gas pressure
low pressure
Raman spectroscopy
Carbon
scanning electron microscopy
carbon

Keywords

  • Diamond growth
  • High growth rate
  • Methane concentration dependence
  • Pressure dependence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD. / Li, Xianglin; Perkins, James; Collazo, Ramon; Nemanich, Robert; Sitar, Zlatko.

In: Diamond and Related Materials, Vol. 15, No. 11-12 SPEC. ISS., 11.2006, p. 1784-1788.

Research output: Contribution to journalArticle

@article{b2795ee2ff21486d9cdf54405c5374b5,
title = "Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD",
abstract = "The influence of total gas pressure (50-125 Torr) and methane concentration (0.75{\%}-10{\%}) on diamond growth by microwave plasma chemical vapor deposition (MPCVD) was investigated. Within the regimes studied, the growth rate was proportional to the methane concentration in the source gas while it exhibited a super-linear dependence on total pressure. For a fixed methane concentration, characterization by Raman spectroscopy, scanning electron microscopy and X-ray diffraction indicated there was a minimum pressure required for the growth of large grain diamond, and conversely, for a fixed pressure, there was a maximum methane concentration that yielded diamond deposition. Higher pressures and higher carbon concentrations yielded diamond growth rates more than 10 times higher than achieved by the conventional low pressure MPCVD process.",
keywords = "Diamond growth, High growth rate, Methane concentration dependence, Pressure dependence",
author = "Xianglin Li and James Perkins and Ramon Collazo and Robert Nemanich and Zlatko Sitar",
year = "2006",
month = "11",
doi = "10.1016/j.diamond.2006.09.008",
language = "English (US)",
volume = "15",
pages = "1784--1788",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "11-12 SPEC. ISS.",

}

TY - JOUR

T1 - Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD

AU - Li, Xianglin

AU - Perkins, James

AU - Collazo, Ramon

AU - Nemanich, Robert

AU - Sitar, Zlatko

PY - 2006/11

Y1 - 2006/11

N2 - The influence of total gas pressure (50-125 Torr) and methane concentration (0.75%-10%) on diamond growth by microwave plasma chemical vapor deposition (MPCVD) was investigated. Within the regimes studied, the growth rate was proportional to the methane concentration in the source gas while it exhibited a super-linear dependence on total pressure. For a fixed methane concentration, characterization by Raman spectroscopy, scanning electron microscopy and X-ray diffraction indicated there was a minimum pressure required for the growth of large grain diamond, and conversely, for a fixed pressure, there was a maximum methane concentration that yielded diamond deposition. Higher pressures and higher carbon concentrations yielded diamond growth rates more than 10 times higher than achieved by the conventional low pressure MPCVD process.

AB - The influence of total gas pressure (50-125 Torr) and methane concentration (0.75%-10%) on diamond growth by microwave plasma chemical vapor deposition (MPCVD) was investigated. Within the regimes studied, the growth rate was proportional to the methane concentration in the source gas while it exhibited a super-linear dependence on total pressure. For a fixed methane concentration, characterization by Raman spectroscopy, scanning electron microscopy and X-ray diffraction indicated there was a minimum pressure required for the growth of large grain diamond, and conversely, for a fixed pressure, there was a maximum methane concentration that yielded diamond deposition. Higher pressures and higher carbon concentrations yielded diamond growth rates more than 10 times higher than achieved by the conventional low pressure MPCVD process.

KW - Diamond growth

KW - High growth rate

KW - Methane concentration dependence

KW - Pressure dependence

UR - http://www.scopus.com/inward/record.url?scp=33751187553&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751187553&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2006.09.008

DO - 10.1016/j.diamond.2006.09.008

M3 - Article

AN - SCOPUS:33751187553

VL - 15

SP - 1784

EP - 1788

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 11-12 SPEC. ISS.

ER -