Investigation of statistical retention of filamentary analog RRAM for neuromophic computing

Meiran Zhao; Huaqiang Wu; Bin Gao; Qingtian Zhang; Wei Wu; Shan Wang; Yue Xi; Dong Wu; Ning Deng; Shimeng Yu; Hong Yu Chen; He Qian

doi:10.1109/IEDM.2017.8268522

Investigation of statistical retention of filamentary analog RRAM for neuromophic computing

Meiran Zhao, Huaqiang Wu, Bin Gao, Qingtian Zhang, Wei Wu, Shan Wang, Yue Xi, Dong Wu, Ning Deng, Shimeng Yu, Hong Yu Chen, He Qian

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Scopus citations

Abstract

The retention requirements of analog RRAM for neuromorphic computing applications are quite different from conventional RRAM for memory applications. Meanwhile, filamentary analog RRAM exhibits different retention behavior in comparison to strong-filament RRAM. For the first time, the statistical behaviors of read current noise and retention in a 1Kb filamentary analog RRAM array are investigated in this work. The conductance distribution of different levels is found to change with time, and the physical mechanism of the retention degradation is elucidated. From the experimental data, a compact model is developed in order to predict the statistical conductance evolution, which can effectively evaluate the impact of read noise and retention degradation in neuromorphic computing systems.

Original language	English (US)
Title of host publication	2017 IEEE International Electron Devices Meeting, IEDM 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	39.4.1-39.4.4
ISBN (Electronic)	9781538635599
DOIs	https://doi.org/10.1109/IEDM.2017.8268522
State	Published - Jan 23 2018
Event	63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States Duration: Dec 2 2017 → Dec 6 2017

Other

Other	63rd IEEE International Electron Devices Meeting, IEDM 2017
Country	United States
City	San Francisco
Period	12/2/17 → 12/6/17

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Zhao, M., Wu, H., Gao, B., Zhang, Q., Wu, W., Wang, S., Xi, Y., Wu, D., Deng, N., Yu, S., Chen, H. Y., & Qian, H. (2018). Investigation of statistical retention of filamentary analog RRAM for neuromophic computing. In 2017 IEEE International Electron Devices Meeting, IEDM 2017 (pp. 39.4.1-39.4.4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268522

Investigation of statistical retention of filamentary analog RRAM for neuromophic computing. / Zhao, Meiran; Wu, Huaqiang; Gao, Bin; Zhang, Qingtian; Wu, Wei; Wang, Shan; Xi, Yue; Wu, Dong; Deng, Ning; Yu, Shimeng; Chen, Hong Yu; Qian, He.

2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 39.4.1-39.4.4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, M, Wu, H, Gao, B, Zhang, Q, Wu, W, Wang, S, Xi, Y, Wu, D, Deng, N, Yu, S, Chen, HY & Qian, H 2018, Investigation of statistical retention of filamentary analog RRAM for neuromophic computing. in 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., pp. 39.4.1-39.4.4, 63rd IEEE International Electron Devices Meeting, IEDM 2017, San Francisco, United States, 12/2/17. https://doi.org/10.1109/IEDM.2017.8268522

Zhao, Meiran ; Wu, Huaqiang ; Gao, Bin ; Zhang, Qingtian ; Wu, Wei ; Wang, Shan ; Xi, Yue ; Wu, Dong ; Deng, Ning ; Yu, Shimeng ; Chen, Hong Yu ; Qian, He. / Investigation of statistical retention of filamentary analog RRAM for neuromophic computing. 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 39.4.1-39.4.4

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Access to Document

10.1109/IEDM.2017.8268522