Abstract
The retention requirements of analog RRAM for neuromorphic computing applications are quite different from conventional RRAM for memory applications. Meanwhile, filamentary analog RRAM exhibits different retention behavior in comparison to strong-filament RRAM. For the first time, the statistical behaviors of read current noise and retention in a 1Kb filamentary analog RRAM array are investigated in this work. The conductance distribution of different levels is found to change with time, and the physical mechanism of the retention degradation is elucidated. From the experimental data, a compact model is developed in order to predict the statistical conductance evolution, which can effectively evaluate the impact of read noise and retention degradation in neuromorphic computing systems.
| Original language | English (US) |
|---|---|
| Title of host publication | 2017 IEEE International Electron Devices Meeting, IEDM 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 39.4.1-39.4.4 |
| ISBN (Electronic) | 9781538635599 |
| DOIs | |
| State | Published - Jan 23 2018 |
| Event | 63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States Duration: Dec 2 2017 → Dec 6 2017 |
Other
| Other | 63rd IEEE International Electron Devices Meeting, IEDM 2017 |
|---|---|
| Country | United States |
| City | San Francisco |
| Period | 12/2/17 → 12/6/17 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Investigation of statistical retention of filamentary analog RRAM for neuromophic computing. / Zhao, Meiran; Wu, Huaqiang; Gao, Bin; Zhang, Qingtian; Wu, Wei; Wang, Shan; Xi, Yue; Wu, Dong; Deng, Ning; Yu, Shimeng; Chen, Hong Yu; Qian, He.
2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 39.4.1-39.4.4.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Investigation of statistical retention of filamentary analog RRAM for neuromophic computing
AU - Zhao, Meiran
AU - Wu, Huaqiang
AU - Gao, Bin
AU - Zhang, Qingtian
AU - Wu, Wei
AU - Wang, Shan
AU - Xi, Yue
AU - Wu, Dong
AU - Deng, Ning
AU - Yu, Shimeng
AU - Chen, Hong Yu
AU - Qian, He
PY - 2018/1/23
Y1 - 2018/1/23
N2 - The retention requirements of analog RRAM for neuromorphic computing applications are quite different from conventional RRAM for memory applications. Meanwhile, filamentary analog RRAM exhibits different retention behavior in comparison to strong-filament RRAM. For the first time, the statistical behaviors of read current noise and retention in a 1Kb filamentary analog RRAM array are investigated in this work. The conductance distribution of different levels is found to change with time, and the physical mechanism of the retention degradation is elucidated. From the experimental data, a compact model is developed in order to predict the statistical conductance evolution, which can effectively evaluate the impact of read noise and retention degradation in neuromorphic computing systems.
AB - The retention requirements of analog RRAM for neuromorphic computing applications are quite different from conventional RRAM for memory applications. Meanwhile, filamentary analog RRAM exhibits different retention behavior in comparison to strong-filament RRAM. For the first time, the statistical behaviors of read current noise and retention in a 1Kb filamentary analog RRAM array are investigated in this work. The conductance distribution of different levels is found to change with time, and the physical mechanism of the retention degradation is elucidated. From the experimental data, a compact model is developed in order to predict the statistical conductance evolution, which can effectively evaluate the impact of read noise and retention degradation in neuromorphic computing systems.
UR - http://www.scopus.com/inward/record.url?scp=85045201487&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85045201487&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2017.8268522
DO - 10.1109/IEDM.2017.8268522
M3 - Conference contribution
AN - SCOPUS:85045201487
SP - 39.4.1-39.4.4
BT - 2017 IEEE International Electron Devices Meeting, IEDM 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -