Investigation of Single-Event Transients in Voltage-Controlled Oscillators

Wenjian Chen, Vincent Pouget, Hugh Barnaby, John D. Cressler, Guofu Niu, Pascal Fouillat, Yann Deval, Dean Lewis

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The responses of voltage-controlled oscillators (VCOs) to single-event transients (SETs) are investigated. Laser testing and simulations indicate that ion strikes on critical transistors cause distortions in the oscillating output. The time it takes for the circuit to resume its normal operating condition is limited by the recovery time of the affected transistor(s) and the oscillator startup time. These limits to circuit recovery time are the primary causes of the frequency dependence of SET responses in VCOs.

Original languageEnglish (US)
Pages (from-to)2081-2087
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume50
Issue number6 I
DOIs
StatePublished - Dec 2003
Externally publishedYes

Fingerprint

voltage controlled oscillators
Variable frequency oscillators
Transistors
Recovery
Networks (circuits)
Transient analysis
transistors
recovery
Lasers
causes
Ions
transient response
Testing
oscillators
output
lasers
ions
simulation

Keywords

  • Radio frequency
  • SiGe hetero-junction bipolar transistor
  • Single-event transients (SETs)
  • Spectrum analyzer
  • Voltage-controlled oscillators

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Chen, W., Pouget, V., Barnaby, H., Cressler, J. D., Niu, G., Fouillat, P., ... Lewis, D. (2003). Investigation of Single-Event Transients in Voltage-Controlled Oscillators. IEEE Transactions on Nuclear Science, 50(6 I), 2081-2087. https://doi.org/10.1109/TNS.2003.820766

Investigation of Single-Event Transients in Voltage-Controlled Oscillators. / Chen, Wenjian; Pouget, Vincent; Barnaby, Hugh; Cressler, John D.; Niu, Guofu; Fouillat, Pascal; Deval, Yann; Lewis, Dean.

In: IEEE Transactions on Nuclear Science, Vol. 50, No. 6 I, 12.2003, p. 2081-2087.

Research output: Contribution to journalArticle

Chen, W, Pouget, V, Barnaby, H, Cressler, JD, Niu, G, Fouillat, P, Deval, Y & Lewis, D 2003, 'Investigation of Single-Event Transients in Voltage-Controlled Oscillators', IEEE Transactions on Nuclear Science, vol. 50, no. 6 I, pp. 2081-2087. https://doi.org/10.1109/TNS.2003.820766
Chen, Wenjian ; Pouget, Vincent ; Barnaby, Hugh ; Cressler, John D. ; Niu, Guofu ; Fouillat, Pascal ; Deval, Yann ; Lewis, Dean. / Investigation of Single-Event Transients in Voltage-Controlled Oscillators. In: IEEE Transactions on Nuclear Science. 2003 ; Vol. 50, No. 6 I. pp. 2081-2087.
@article{0a9242a219344c1ea86205e8bdc4483b,
title = "Investigation of Single-Event Transients in Voltage-Controlled Oscillators",
abstract = "The responses of voltage-controlled oscillators (VCOs) to single-event transients (SETs) are investigated. Laser testing and simulations indicate that ion strikes on critical transistors cause distortions in the oscillating output. The time it takes for the circuit to resume its normal operating condition is limited by the recovery time of the affected transistor(s) and the oscillator startup time. These limits to circuit recovery time are the primary causes of the frequency dependence of SET responses in VCOs.",
keywords = "Radio frequency, SiGe hetero-junction bipolar transistor, Single-event transients (SETs), Spectrum analyzer, Voltage-controlled oscillators",
author = "Wenjian Chen and Vincent Pouget and Hugh Barnaby and Cressler, {John D.} and Guofu Niu and Pascal Fouillat and Yann Deval and Dean Lewis",
year = "2003",
month = "12",
doi = "10.1109/TNS.2003.820766",
language = "English (US)",
volume = "50",
pages = "2081--2087",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6 I",

}

TY - JOUR

T1 - Investigation of Single-Event Transients in Voltage-Controlled Oscillators

AU - Chen, Wenjian

AU - Pouget, Vincent

AU - Barnaby, Hugh

AU - Cressler, John D.

AU - Niu, Guofu

AU - Fouillat, Pascal

AU - Deval, Yann

AU - Lewis, Dean

PY - 2003/12

Y1 - 2003/12

N2 - The responses of voltage-controlled oscillators (VCOs) to single-event transients (SETs) are investigated. Laser testing and simulations indicate that ion strikes on critical transistors cause distortions in the oscillating output. The time it takes for the circuit to resume its normal operating condition is limited by the recovery time of the affected transistor(s) and the oscillator startup time. These limits to circuit recovery time are the primary causes of the frequency dependence of SET responses in VCOs.

AB - The responses of voltage-controlled oscillators (VCOs) to single-event transients (SETs) are investigated. Laser testing and simulations indicate that ion strikes on critical transistors cause distortions in the oscillating output. The time it takes for the circuit to resume its normal operating condition is limited by the recovery time of the affected transistor(s) and the oscillator startup time. These limits to circuit recovery time are the primary causes of the frequency dependence of SET responses in VCOs.

KW - Radio frequency

KW - SiGe hetero-junction bipolar transistor

KW - Single-event transients (SETs)

KW - Spectrum analyzer

KW - Voltage-controlled oscillators

UR - http://www.scopus.com/inward/record.url?scp=1242332786&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1242332786&partnerID=8YFLogxK

U2 - 10.1109/TNS.2003.820766

DO - 10.1109/TNS.2003.820766

M3 - Article

AN - SCOPUS:1242332786

VL - 50

SP - 2081

EP - 2087

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6 I

ER -