Investigation of Single-Event Transients in Voltage-Controlled Oscillators

Wenjian Chen, Vincent Pouget, Hugh J. Barnaby, John D. Cressler, Guofu Niu, Pascal Fouillat, Yann Deval, Dean Lewis

Research output: Contribution to journalArticle

41 Scopus citations

Abstract

The responses of voltage-controlled oscillators (VCOs) to single-event transients (SETs) are investigated. Laser testing and simulations indicate that ion strikes on critical transistors cause distortions in the oscillating output. The time it takes for the circuit to resume its normal operating condition is limited by the recovery time of the affected transistor(s) and the oscillator startup time. These limits to circuit recovery time are the primary causes of the frequency dependence of SET responses in VCOs.

Original languageEnglish (US)
Pages (from-to)2081-2087
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume50
Issue number6 I
DOIs
StatePublished - Dec 1 2003
Externally publishedYes

Keywords

  • Radio frequency
  • SiGe hetero-junction bipolar transistor
  • Single-event transients (SETs)
  • Spectrum analyzer
  • Voltage-controlled oscillators

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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    Chen, W., Pouget, V., Barnaby, H. J., Cressler, J. D., Niu, G., Fouillat, P., Deval, Y., & Lewis, D. (2003). Investigation of Single-Event Transients in Voltage-Controlled Oscillators. IEEE Transactions on Nuclear Science, 50(6 I), 2081-2087. https://doi.org/10.1109/TNS.2003.820766