Abstract

Programmable metallization cell (PMC) devices belong to a class of non-volatile ionic resistive memory devices that have already demonstrated tolerance to high total doses of ionizing radiation. In this work, the susceptibility of integrated 1T-1R PMC memory array to ion strike induced single event upsets is analyzed. Circuit simulations that model single event transients in 1T-1R elements are performed using a PMC compact model which captures the voltage driven resistance change mechanism experimentally observed in such devices. The relationship between incident ion LET and change in PMC resistance and its consequent susceptibility to an upset is investigated through both simulation and experiment.

Original languageEnglish (US)
Article number6935043
Pages (from-to)3557-3563
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number6
DOIs
StatePublished - Dec 1 2014

Fingerprint

Metallizing
Data storage equipment
cells
single event upsets
magnetic permeability
Circuit simulation
Ionizing radiation
Ions
ionizing radiation
Dosimetry
ions
simulation
dosage
Electric potential
electric potential
Experiments

Keywords

  • Chalcogenide
  • electrochemical memory cell
  • nano-ionic memory
  • programmable metallization cells (PMCs)
  • radiation effects
  • resistive RAM (ReRAM)
  • single event effects
  • single event transients
  • single event upset

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Investigation of single event induced soft errors in programmable metallization cell memory. / Mahalanabis, Debayan; Barnaby, Hugh; Kozicki, Michael; Bharadwaj, Vineeth; Rajabi, Saba.

In: IEEE Transactions on Nuclear Science, Vol. 61, No. 6, 6935043, 01.12.2014, p. 3557-3563.

Research output: Contribution to journalArticle

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