Investigation of silicon nanowire biosensors using the 2D drift-diffusion model

Sriraman Damodaran, Selvakumaran Vadivelmurugan, Quoc Thai Do, Clemens Heitzinger, Yang Liu, Gerhard Klimeck

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Experiments for silicon biosensors with gate lengths in the range of 200nm to 500nm have not been extensively carried out. In this paper, simulations were performed for gate lengths proportionally smaller and greater than regular experimental gate lengths. The sensitivity of the biosensors was simulated using a 2D drift-diffusion model in cylindrical coordinates using the Prophet simulator. In this study simulated conductance results and the respective experimental values [2] are compared. The good agreement between simulation and experiment enables us to predict and optimize the sensitivity of the DNA sensors. The sensitivity was studied in terms of conductance by varying the gate length, probe spacing, binding efficiency and angle of probe from normal.

Original languageEnglish (US)
Title of host publication2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Pages542-544
Number of pages3
Volume2
StatePublished - 2007
Externally publishedYes
Event2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
Duration: May 20 2007May 24 2007

Other

Other2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
CountryUnited States
CitySanta Clara, CA
Period5/20/075/24/07

Fingerprint

Biosensors
Nanowires
Silicon
DNA
Simulators
Experiments
Sensors

Keywords

  • BioFET
  • Biosensor
  • DNA-FET
  • Silicon nanowire

ASJC Scopus subject areas

  • Mechanical Engineering

Cite this

Damodaran, S., Vadivelmurugan, S., Do, Q. T., Heitzinger, C., Liu, Y., & Klimeck, G. (2007). Investigation of silicon nanowire biosensors using the 2D drift-diffusion model. In 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings (Vol. 2, pp. 542-544)

Investigation of silicon nanowire biosensors using the 2D drift-diffusion model. / Damodaran, Sriraman; Vadivelmurugan, Selvakumaran; Do, Quoc Thai; Heitzinger, Clemens; Liu, Yang; Klimeck, Gerhard.

2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings. Vol. 2 2007. p. 542-544.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Damodaran, S, Vadivelmurugan, S, Do, QT, Heitzinger, C, Liu, Y & Klimeck, G 2007, Investigation of silicon nanowire biosensors using the 2D drift-diffusion model. in 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings. vol. 2, pp. 542-544, 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Santa Clara, CA, United States, 5/20/07.
Damodaran S, Vadivelmurugan S, Do QT, Heitzinger C, Liu Y, Klimeck G. Investigation of silicon nanowire biosensors using the 2D drift-diffusion model. In 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings. Vol. 2. 2007. p. 542-544
Damodaran, Sriraman ; Vadivelmurugan, Selvakumaran ; Do, Quoc Thai ; Heitzinger, Clemens ; Liu, Yang ; Klimeck, Gerhard. / Investigation of silicon nanowire biosensors using the 2D drift-diffusion model. 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings. Vol. 2 2007. pp. 542-544
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