Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission

Oluwatobi Olorunsola, Solomon Ojo, Grey Abernathy, Yiyin Zhou, Sylvester Amoah, P. C. Grant, Wei Dou, Joe Margetis, John Tolle, Andrian Kuchuk, Wei Du, Baohua Li, Yong Hang Zhang, Shui Qing Yu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well configuration. The thicker well leads to: (i) lowered ground energy level in Γ valley offering more bandgap directness; (ii) increased carrier density in the well; and (iii) improved carrier collection due to increased barrier height. As a result, significantly enhanced emission from the quantum well was observed. The strong photoluminescence (PL) signal allows for the estimation of quantum efficiency (QE), which was unattainable in previous studies. Using pumping-power-dependent PL spectra at 20K, the peak spontaneous QE and external QE were measured as 37.9% and 1.45%, respectively.

Original languageEnglish (US)
Article number085201
JournalNanotechnology
Volume33
Issue number8
DOIs
StatePublished - Feb 19 2022
Externally publishedYes

Keywords

  • germanium tin
  • quantum efficiency
  • quantum well
  • silicon germanium tin

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission'. Together they form a unique fingerprint.

Cite this