Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission

Oluwatobi Olorunsola; Solomon Ojo; Grey Abernathy; Yiyin Zhou; Sylvester Amoah; P. C. Grant; Wei Dou; Joe Margetis; John Tolle; Andrian Kuchuk; Wei Du; Baohua Li; Yong Hang Zhang; Shui Qing Yu

doi:10.1088/1361-6528/ac38e4

Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission

Oluwatobi Olorunsola, Solomon Ojo, Grey Abernathy, Yiyin Zhou, Sylvester Amoah, P. C. Grant, Wei Dou, Joe Margetis, John Tolle, Andrian Kuchuk, Wei Du, Baohua Li, Yong Hang Zhang, Shui Qing Yu

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well configuration. The thicker well leads to: (i) lowered ground energy level in Γ valley offering more bandgap directness; (ii) increased carrier density in the well; and (iii) improved carrier collection due to increased barrier height. As a result, significantly enhanced emission from the quantum well was observed. The strong photoluminescence (PL) signal allows for the estimation of quantum efficiency (QE), which was unattainable in previous studies. Using pumping-power-dependent PL spectra at 20K, the peak spontaneous QE and external QE were measured as 37.9% and 1.45%, respectively.

Original language	English (US)
Article number	085201
Journal	Nanotechnology
Volume	33
Issue number	8
DOIs	https://doi.org/10.1088/1361-6528/ac38e4
State	Published - Feb 19 2022

Keywords

germanium tin
quantum efficiency
quantum well
silicon germanium tin

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/1361-6528/ac38e4

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title = "Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission",

abstract = "In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well configuration. The thicker well leads to: (i) lowered ground energy level in Γ valley offering more bandgap directness; (ii) increased carrier density in the well; and (iii) improved carrier collection due to increased barrier height. As a result, significantly enhanced emission from the quantum well was observed. The strong photoluminescence (PL) signal allows for the estimation of quantum efficiency (QE), which was unattainable in previous studies. Using pumping-power-dependent PL spectra at 20K, the peak spontaneous QE and external QE were measured as 37.9% and 1.45%, respectively.",

keywords = "germanium tin, quantum efficiency, quantum well, silicon germanium tin",

author = "Oluwatobi Olorunsola and Solomon Ojo and Grey Abernathy and Yiyin Zhou and Sylvester Amoah and Grant, {P. C.} and Wei Dou and Joe Margetis and John Tolle and Andrian Kuchuk and Wei Du and Baohua Li and Zhang, {Yong Hang} and Yu, {Shui Qing}",

note = "Publisher Copyright: {\textcopyright} 2021 IOP Publishing Ltd.",

year = "2022",

month = feb,

day = "19",

doi = "10.1088/1361-6528/ac38e4",

language = "English (US)",

volume = "33",

journal = "Nanotechnology",

issn = "0957-4484",

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TY - JOUR

T1 - Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission

AU - Olorunsola, Oluwatobi

AU - Ojo, Solomon

AU - Abernathy, Grey

AU - Zhou, Yiyin

AU - Amoah, Sylvester

AU - Grant, P. C.

AU - Dou, Wei

AU - Margetis, Joe

AU - Tolle, John

AU - Kuchuk, Andrian

AU - Du, Wei

AU - Li, Baohua

AU - Zhang, Yong Hang

AU - Yu, Shui Qing

PY - 2022/2/19

Y1 - 2022/2/19

N2 - In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well configuration. The thicker well leads to: (i) lowered ground energy level in Γ valley offering more bandgap directness; (ii) increased carrier density in the well; and (iii) improved carrier collection due to increased barrier height. As a result, significantly enhanced emission from the quantum well was observed. The strong photoluminescence (PL) signal allows for the estimation of quantum efficiency (QE), which was unattainable in previous studies. Using pumping-power-dependent PL spectra at 20K, the peak spontaneous QE and external QE were measured as 37.9% and 1.45%, respectively.

AB - In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well configuration. The thicker well leads to: (i) lowered ground energy level in Γ valley offering more bandgap directness; (ii) increased carrier density in the well; and (iii) improved carrier collection due to increased barrier height. As a result, significantly enhanced emission from the quantum well was observed. The strong photoluminescence (PL) signal allows for the estimation of quantum efficiency (QE), which was unattainable in previous studies. Using pumping-power-dependent PL spectra at 20K, the peak spontaneous QE and external QE were measured as 37.9% and 1.45%, respectively.

KW - germanium tin

KW - quantum efficiency

KW - quantum well

KW - silicon germanium tin

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U2 - 10.1088/1361-6528/ac38e4

DO - 10.1088/1361-6528/ac38e4

M3 - Article

C2 - 34763328

AN - SCOPUS:85121781575

SN - 0957-4484

VL - 33

JO - Nanotechnology

JF - Nanotechnology

IS - 8

M1 - 085201

ER -

Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission

Abstract

Keywords

ASJC Scopus subject areas

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