Investigation of Plasmon-Induced Losses in Quasi-Ballistic Transport

P. Lugli; D. K. Ferry

doi:10.1109/EDL.1985.26030

Investigation of Plasmon-Induced Losses in Quasi-Ballistic Transport

P. Lugli, D. K. Ferry

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33 Scopus citations

Abstract

We present an ensemble Monte Carlo (EMC) simulation of the effect of electron-electron (e-e) and electron-plasmon (e-pl) interactions on the transient behavior of electrons under high energy injection conditions. It is shown that, in a situation that closely resembles that obtained in the base of a planar-doped barrier (PDB) transistor, the coulombic interaction severely limits the possibility of ballistic transport.

Original language	English (US)
Pages (from-to)	25-27
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	6
Issue number	1
DOIs	https://doi.org/10.1109/EDL.1985.26030
State	Published - 1985

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1985.26030

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title = "Investigation of Plasmon-Induced Losses in Quasi-Ballistic Transport",

abstract = "We present an ensemble Monte Carlo (EMC) simulation of the effect of electron-electron (e-e) and electron-plasmon (e-pl) interactions on the transient behavior of electrons under high energy injection conditions. It is shown that, in a situation that closely resembles that obtained in the base of a planar-doped barrier (PDB) transistor, the coulombic interaction severely limits the possibility of ballistic transport.",

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AU - Ferry, D. K.

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N2 - We present an ensemble Monte Carlo (EMC) simulation of the effect of electron-electron (e-e) and electron-plasmon (e-pl) interactions on the transient behavior of electrons under high energy injection conditions. It is shown that, in a situation that closely resembles that obtained in the base of a planar-doped barrier (PDB) transistor, the coulombic interaction severely limits the possibility of ballistic transport.

AB - We present an ensemble Monte Carlo (EMC) simulation of the effect of electron-electron (e-e) and electron-plasmon (e-pl) interactions on the transient behavior of electrons under high energy injection conditions. It is shown that, in a situation that closely resembles that obtained in the base of a planar-doped barrier (PDB) transistor, the coulombic interaction severely limits the possibility of ballistic transport.

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DO - 10.1109/EDL.1985.26030

M3 - Article

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JO - IEEE Electron Device Letters

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IS - 1

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Investigation of Plasmon-Induced Losses in Quasi-Ballistic Transport

Abstract

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