Investigation of plasma hydrogenation and trapping mechanism for layer transfer

Peng Chen, Paul K. Chu, T. Höchbauer, J. K. Lee, M. Nastasi, D. Buca, S. Mantl, R. Loo, M. Caymax, Terry Alford, J. W. Mayer, N. David Theodore, M. Cai, B. Schmidt, S. S. Lau

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Hydrogen ion implantation is conventionally used to initiate the transfer of Si thin layers onto Si wafers coated with thermal oxide. In this work, we studied the feasibility of using plasma hydrogenation to replace high dose H implantation for layer transfer. Boron ion implantation was used to introduce H -trapping centers into Si wafers to illustrate the idea. Instead of the widely recognized interactions between boron and hydrogen atoms, this study showed that lattice damage, i.e., dangling bonds, traps H atoms and can lead to surface blistering during hydrogenation or upon postannealing at higher temperature. The B implantation and subsequent processes control the uniformity of H trapping and the trap depths. While the trap centers were introduced by B implantation in this study, there are many other means to do the same without implantation. Our results suggest an innovative way to achieve high quality transfer of Si layers without H implantation at high energies and high doses.

Original languageEnglish (US)
Article number031904
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number3
DOIs
StatePublished - Jan 17 2005

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hydrogenation
implantation
trapping
traps
ion implantation
boron
wafers
dosage
hydrogen ions
atoms
hydrogen atoms
damage
oxides
interactions
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, P., Chu, P. K., Höchbauer, T., Lee, J. K., Nastasi, M., Buca, D., ... Lau, S. S. (2005). Investigation of plasma hydrogenation and trapping mechanism for layer transfer. Applied Physics Letters, 86(3), 1-3. [031904]. https://doi.org/10.1063/1.1852087

Investigation of plasma hydrogenation and trapping mechanism for layer transfer. / Chen, Peng; Chu, Paul K.; Höchbauer, T.; Lee, J. K.; Nastasi, M.; Buca, D.; Mantl, S.; Loo, R.; Caymax, M.; Alford, Terry; Mayer, J. W.; Theodore, N. David; Cai, M.; Schmidt, B.; Lau, S. S.

In: Applied Physics Letters, Vol. 86, No. 3, 031904, 17.01.2005, p. 1-3.

Research output: Contribution to journalArticle

Chen, P, Chu, PK, Höchbauer, T, Lee, JK, Nastasi, M, Buca, D, Mantl, S, Loo, R, Caymax, M, Alford, T, Mayer, JW, Theodore, ND, Cai, M, Schmidt, B & Lau, SS 2005, 'Investigation of plasma hydrogenation and trapping mechanism for layer transfer', Applied Physics Letters, vol. 86, no. 3, 031904, pp. 1-3. https://doi.org/10.1063/1.1852087
Chen P, Chu PK, Höchbauer T, Lee JK, Nastasi M, Buca D et al. Investigation of plasma hydrogenation and trapping mechanism for layer transfer. Applied Physics Letters. 2005 Jan 17;86(3):1-3. 031904. https://doi.org/10.1063/1.1852087
Chen, Peng ; Chu, Paul K. ; Höchbauer, T. ; Lee, J. K. ; Nastasi, M. ; Buca, D. ; Mantl, S. ; Loo, R. ; Caymax, M. ; Alford, Terry ; Mayer, J. W. ; Theodore, N. David ; Cai, M. ; Schmidt, B. ; Lau, S. S. / Investigation of plasma hydrogenation and trapping mechanism for layer transfer. In: Applied Physics Letters. 2005 ; Vol. 86, No. 3. pp. 1-3.
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