Investigation of MBE-grown InAs1-xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy

Jing Lu; P. T. Webster; S. Liu; Yong-Hang Zhang; Shane Johnson; David Smith

doi:10.1016/j.jcrysgro.2015.02.012

Investigation of MBE-grown InAs_1-xBi_x alloys and Bi-mediated type-II superlattices by transmission electron microscopy

Jing Lu, P. T. Webster, S. Liu, Yong-Hang Zhang, Shane Johnson, David Smith

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The microstructure of InAs_1-xBi_x (x~4.5% and ~5.8%) films and Bi-mediated InAs/InAs_1-xSb_x type-II superlattices grown by molecular beam epitaxy on GaSb (0 0 1) substrates has been investigated by electron microscopy techniques. Lateral compositional modulation exists in both smooth and hazy regions of all InAsBi films observed but no atomic ordering is apparent using current imaging projections. Surface droplets present in hazy regions assume a zincblende crystalline structure that is usually tilted relative to the underlying dilute bismide film. Study of Bi-mediated InAs/InAs_0.81Sb_0.19 type-II superlattices indicates that the InAs-on-InAsSb interface still appears broadened relative to the InAsSb-on-InAs interface.

Original language	English (US)
Pages (from-to)	250-254
Number of pages	5
Journal	Journal of Crystal Growth
Volume	425
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.012
State	Published - Jul 28 2015

Keywords

Bismides
Infrared detection
Interface abruptness
Molecular beam epitaxy
Phase separation
Type-II superlattices

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2015.02.012

Cite this

@article{7d1ea8e8d6564ddb8863df70edf0722a,

title = "Investigation of MBE-grown InAs1-xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy",

abstract = "The microstructure of InAs1-xBix (x~4.5% and ~5.8%) films and Bi-mediated InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb (0 0 1) substrates has been investigated by electron microscopy techniques. Lateral compositional modulation exists in both smooth and hazy regions of all InAsBi films observed but no atomic ordering is apparent using current imaging projections. Surface droplets present in hazy regions assume a zincblende crystalline structure that is usually tilted relative to the underlying dilute bismide film. Study of Bi-mediated InAs/InAs0.81Sb0.19 type-II superlattices indicates that the InAs-on-InAsSb interface still appears broadened relative to the InAsSb-on-InAs interface.",

keywords = "Bismides, Infrared detection, Interface abruptness, Molecular beam epitaxy, Phase separation, Type-II superlattices",

author = "Jing Lu and Webster, {P. T.} and S. Liu and Yong-Hang Zhang and Shane Johnson and David Smith",

year = "2015",

month = jul,

day = "28",

doi = "10.1016/j.jcrysgro.2015.02.012",

language = "English (US)",

volume = "425",

pages = "250--254",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Investigation of MBE-grown InAs1-xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy

AU - Lu, Jing

AU - Webster, P. T.

AU - Liu, S.

AU - Zhang, Yong-Hang

AU - Johnson, Shane

AU - Smith, David

PY - 2015/7/28

Y1 - 2015/7/28

N2 - The microstructure of InAs1-xBix (x~4.5% and ~5.8%) films and Bi-mediated InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb (0 0 1) substrates has been investigated by electron microscopy techniques. Lateral compositional modulation exists in both smooth and hazy regions of all InAsBi films observed but no atomic ordering is apparent using current imaging projections. Surface droplets present in hazy regions assume a zincblende crystalline structure that is usually tilted relative to the underlying dilute bismide film. Study of Bi-mediated InAs/InAs0.81Sb0.19 type-II superlattices indicates that the InAs-on-InAsSb interface still appears broadened relative to the InAsSb-on-InAs interface.

AB - The microstructure of InAs1-xBix (x~4.5% and ~5.8%) films and Bi-mediated InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb (0 0 1) substrates has been investigated by electron microscopy techniques. Lateral compositional modulation exists in both smooth and hazy regions of all InAsBi films observed but no atomic ordering is apparent using current imaging projections. Surface droplets present in hazy regions assume a zincblende crystalline structure that is usually tilted relative to the underlying dilute bismide film. Study of Bi-mediated InAs/InAs0.81Sb0.19 type-II superlattices indicates that the InAs-on-InAsSb interface still appears broadened relative to the InAsSb-on-InAs interface.

KW - Bismides

KW - Infrared detection

KW - Interface abruptness

KW - Molecular beam epitaxy

KW - Phase separation

KW - Type-II superlattices

UR - http://www.scopus.com/inward/record.url?scp=84937825786&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84937825786&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2015.02.012

DO - 10.1016/j.jcrysgro.2015.02.012

M3 - Article

AN - SCOPUS:84937825786

SN - 0022-0248

VL - 425

SP - 250

EP - 254

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -