Abstract

The microstructure of InAs<inf>1-x</inf>Bi<inf>x</inf> (x~4.5% and ~5.8%) films and Bi-mediated InAs/InAs<inf>1-x</inf>Sb<inf>x</inf> type-II superlattices grown by molecular beam epitaxy on GaSb (0 0 1) substrates has been investigated by electron microscopy techniques. Lateral compositional modulation exists in both smooth and hazy regions of all InAsBi films observed but no atomic ordering is apparent using current imaging projections. Surface droplets present in hazy regions assume a zincblende crystalline structure that is usually tilted relative to the underlying dilute bismide film. Study of Bi-mediated InAs/InAs<inf>0.81</inf>Sb<inf>0.19</inf> type-II superlattices indicates that the InAs-on-InAsSb interface still appears broadened relative to the InAsSb-on-InAs interface.

Original languageEnglish (US)
Pages (from-to)250-254
Number of pages5
JournalJournal of Crystal Growth
Volume425
DOIs
StatePublished - Jul 28 2015

Fingerprint

Superlattices
Molecular beam epitaxy
superlattices
Transmission electron microscopy
transmission electron microscopy
zincblende
Electron microscopy
electron microscopy
molecular beam epitaxy
projection
Modulation
Crystalline materials
Imaging techniques
modulation
microstructure
Microstructure
Substrates
indium arsenide

Keywords

  • Bismides
  • Infrared detection
  • Interface abruptness
  • Molecular beam epitaxy
  • Phase separation
  • Type-II superlattices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

@article{7d1ea8e8d6564ddb8863df70edf0722a,
title = "Investigation of MBE-grown InAs1-xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy",
abstract = "The microstructure of InAs1-xBix (x~4.5{\%} and ~5.8{\%}) films and Bi-mediated InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb (0 0 1) substrates has been investigated by electron microscopy techniques. Lateral compositional modulation exists in both smooth and hazy regions of all InAsBi films observed but no atomic ordering is apparent using current imaging projections. Surface droplets present in hazy regions assume a zincblende crystalline structure that is usually tilted relative to the underlying dilute bismide film. Study of Bi-mediated InAs/InAs0.81Sb0.19 type-II superlattices indicates that the InAs-on-InAsSb interface still appears broadened relative to the InAsSb-on-InAs interface.",
keywords = "Bismides, Infrared detection, Interface abruptness, Molecular beam epitaxy, Phase separation, Type-II superlattices",
author = "Jing Lu and Webster, {P. T.} and S. Liu and Yong-Hang Zhang and Shane Johnson and David Smith",
year = "2015",
month = "7",
day = "28",
doi = "10.1016/j.jcrysgro.2015.02.012",
language = "English (US)",
volume = "425",
pages = "250--254",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Investigation of MBE-grown InAs1-xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy

AU - Lu, Jing

AU - Webster, P. T.

AU - Liu, S.

AU - Zhang, Yong-Hang

AU - Johnson, Shane

AU - Smith, David

PY - 2015/7/28

Y1 - 2015/7/28

N2 - The microstructure of InAs1-xBix (x~4.5% and ~5.8%) films and Bi-mediated InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb (0 0 1) substrates has been investigated by electron microscopy techniques. Lateral compositional modulation exists in both smooth and hazy regions of all InAsBi films observed but no atomic ordering is apparent using current imaging projections. Surface droplets present in hazy regions assume a zincblende crystalline structure that is usually tilted relative to the underlying dilute bismide film. Study of Bi-mediated InAs/InAs0.81Sb0.19 type-II superlattices indicates that the InAs-on-InAsSb interface still appears broadened relative to the InAsSb-on-InAs interface.

AB - The microstructure of InAs1-xBix (x~4.5% and ~5.8%) films and Bi-mediated InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb (0 0 1) substrates has been investigated by electron microscopy techniques. Lateral compositional modulation exists in both smooth and hazy regions of all InAsBi films observed but no atomic ordering is apparent using current imaging projections. Surface droplets present in hazy regions assume a zincblende crystalline structure that is usually tilted relative to the underlying dilute bismide film. Study of Bi-mediated InAs/InAs0.81Sb0.19 type-II superlattices indicates that the InAs-on-InAsSb interface still appears broadened relative to the InAsSb-on-InAs interface.

KW - Bismides

KW - Infrared detection

KW - Interface abruptness

KW - Molecular beam epitaxy

KW - Phase separation

KW - Type-II superlattices

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U2 - 10.1016/j.jcrysgro.2015.02.012

DO - 10.1016/j.jcrysgro.2015.02.012

M3 - Article

VL - 425

SP - 250

EP - 254

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -