Abstract

The effect of localized electric field (F) was investigated in the type-II InAs/GaAsSb/GaAs structures. To compare type-I to type-II, two types of samples with different Sb contents was grown by molecular beam epitaxy, whose Sb contents are 3% (type-I) and 16% (type-II), respectively. In the both samples, we performed excitation power dependent-photoreflectance at 10 K and the result showed that the period of the Franz-Keldysh oscillation, revealed above the band gap (Eg) of GaAs, was broadened in the only type-II system, which means that F was also increased because it is proportional to the period of the Franz-Keldysh oscillation while the period of the Franz-Keldysh oscillations stayed unchanged in type-I system. This phenomenon is explained by that the F was affected by the band bending effect caused by the spatially separated photo-excited carriers in the interface between GaAsSb and GaAs. The F changed linearly as a function of square root of excitation power as expected for the F. Moreover, F was calculated using fast Fourier transform method for a qualitative analysis, which is in a good agreement with the theory of triangular well approximation.

Original languageEnglish (US)
Pages (from-to)1213-1216
Number of pages4
JournalActa Physica Polonica A
Volume130
Issue number5
DOIs
StatePublished - Nov 1 2016

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oscillations
electric fields
qualitative analysis
excitation
molecular beam epitaxy
approximation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Investigation of localized electric field in the type-II InAs/GaAsSb/GaAs structure. / Lee, S. H.; Kim, J. S.; Yoon, S.; Kim, Y.; Lee, S. J.; Honsberg, Christiana.

In: Acta Physica Polonica A, Vol. 130, No. 5, 01.11.2016, p. 1213-1216.

Research output: Contribution to journalArticle

Lee, S. H. ; Kim, J. S. ; Yoon, S. ; Kim, Y. ; Lee, S. J. ; Honsberg, Christiana. / Investigation of localized electric field in the type-II InAs/GaAsSb/GaAs structure. In: Acta Physica Polonica A. 2016 ; Vol. 130, No. 5. pp. 1213-1216.
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