Investigation of hydrogen inductively coupled plasma treatment effect for Ge_0.938Sn_0.062/Ge/Si film using photoreflectance spectroscopy

Engineering & Materials Science

• Buffer layers 95%
• Chemical vapor deposition 15%
• Defects 9%
• Epitaxial films 20%
• Hydrogen 53%
• Inductively coupled plasma 100%
• Optical properties 16%
• Spectroscopy 74%
• Substrates 18%
• Temperature 10%
• Tensile strain 33%
• Ultrahigh vacuum 21%
• Valence bands 24%
• X ray diffraction 13%

Chemical Compounds

• Buffer Solution 43%
• Chemical Vapour Deposition 12%
• Energy 12%
• Epitaxial Film 19%
• Hydrogen 33%
• Inductively Coupled Plasma 66%
• Liquid Film 32%
• Optical Property 9%
• Spectroscopy 43%
• Strain 37%
• Surface 8%
• Vacuum 10%
• Valence Band 14%

Physics & Astronomy

• buffers 25%
• conduction 4%
• defects 3%
• diffraction 3%
• energy 3%
• high resolution 3%
• hydrogen 41%
• optical properties 3%
• spectroscopy 35%
• temperature 3%
• ultrahigh vacuum 6%
• valence 4%
• valleys 6%
• vapor deposition 4%
• x rays 2%