Investigation of HgCdTe p-n device structures grown by liquid-phase epitaxy

Changzhen Wang, Steve Tobin, Themis Parodos, David Smith

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Abstract

The microstructure of p-n device structures grown by liquid-phase epitaxy (LPE) on CdZnTe substrates has been evaluated using transmission electron microscopy (TEM). The devices consisted of thick (∼21-μm) n-type layers and thin (∼1.6-μm) p-type layers, with final CdTe (∼0.5 μm) passivation layers. Initial observations revealed small defects, both within the n-type layer (doped with 8 × 10 14/cm 3 of In) and also within the p-type layer but at a much reduced level. These defects were not visible, however, in cross-sectional samples prepared by ion milling with the sample held at liquid nitrogen temperature. Only isolated growth defects were observed in samples having low indium doping levels (2 × 10 14/cm 3). The CdTe passivation layers were generally columnar and polycrystalline, and interfaces with the p-type HgCdTe layers were uneven. No obvious structural changes were apparent in the region of the CdTe/HgCdTe interfaces as a result of annealing at 250°C.

Original languageEnglish (US)
Pages (from-to)1192-1196
Number of pages5
JournalJournal of Electronic Materials
Volume35
Issue number6
Publication statusPublished - Jun 2006

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Keywords

  • CdTe passivation layer
  • Focused ion beam (FIB)
  • HgCdTe
  • Liquid-phase epitaxy (LPE)
  • P-n junction
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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