TY - JOUR
T1 - Investigation of HgCdTe p-n device structures grown by liquid-phase epitaxy
AU - Wang, Changzhen
AU - Tobin, Steve
AU - Parodos, Themis
AU - Smith, David
N1 - Funding Information:
This work has been partially supported by the DoD Multidisciplinary University Research Initiative (MURI) program administered by the Army Research Office under Grant No. DAAD-19-01-1-0462, monitored by Dr. W. Clark. We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University, and we thank Grant Baumgardner for assistance with FIB sample preparation.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2006/6
Y1 - 2006/6
N2 - The microstructure of p-n device structures grown by liquid-phase epitaxy (LPE) on CdZnTe substrates has been evaluated using transmission electron microscopy (TEM). The devices consisted of thick (∼21-μm) n-type layers and thin (∼1.6-μm) p-type layers, with final CdTe (∼0.5 μm) passivation layers. Initial observations revealed small defects, both within the n-type layer (doped with 8 × 1014/cm3 of In) and also within the p-type layer but at a much reduced level. These defects were not visible, however, in cross-sectional samples prepared by ion milling with the sample held at liquid nitrogen temperature. Only isolated growth defects were observed in samples having low indium doping levels (2 × 10 14/cm3). The CdTe passivation layers were generally columnar and polycrystalline, and interfaces with the p-type HgCdTe layers were uneven. No obvious structural changes were apparent in the region of the CdTe/HgCdTe interfaces as a result of annealing at 250°C.
AB - The microstructure of p-n device structures grown by liquid-phase epitaxy (LPE) on CdZnTe substrates has been evaluated using transmission electron microscopy (TEM). The devices consisted of thick (∼21-μm) n-type layers and thin (∼1.6-μm) p-type layers, with final CdTe (∼0.5 μm) passivation layers. Initial observations revealed small defects, both within the n-type layer (doped with 8 × 1014/cm3 of In) and also within the p-type layer but at a much reduced level. These defects were not visible, however, in cross-sectional samples prepared by ion milling with the sample held at liquid nitrogen temperature. Only isolated growth defects were observed in samples having low indium doping levels (2 × 10 14/cm3). The CdTe passivation layers were generally columnar and polycrystalline, and interfaces with the p-type HgCdTe layers were uneven. No obvious structural changes were apparent in the region of the CdTe/HgCdTe interfaces as a result of annealing at 250°C.
KW - CdTe passivation layer
KW - Focused ion beam (FIB)
KW - HgCdTe
KW - Liquid-phase epitaxy (LPE)
KW - P-n junction
KW - Transmission electron microscopy (TEM)
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U2 - 10.1007/s11664-006-0240-8
DO - 10.1007/s11664-006-0240-8
M3 - Article
AN - SCOPUS:33745485864
SN - 0361-5235
VL - 35
SP - 1192
EP - 1196
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 6
ER -