Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques

Engineering & Materials Science

• Wet etching 100%
• Microscopic examination 77%
• Diffraction 77%
• Defects 49%
• Defect density 34%
• Buffer layers 34%
• Atomic force microscopy 30%
• Molecular beam epitaxy 18%
• Sapphire 15%
• Electron diffraction 15%
• Surface defects 14%
• Surface morphology 13%
• Etching 12%
• Transmission electron microscopy 12%
• Molten materials 11%
• Acids 10%
• Temperature 9%
• Imaging techniques 9%
• Availability 8%

Physics & Astronomy

• polarity 67%
• etching 54%
• microscopy 50%
• defects 39%
• diffraction 38%
• buffers 20%
• atomic force microscopy 18%
• surface defects 13%
• attack 12%
• availability 12%
• confidence 11%
• acids 10%
• electron diffraction 10%
• molecular beam epitaxy 10%
• sapphire 10%
• transmission electron microscopy 7%
• estimates 7%

Chemical Compounds

• Etching 64%
• Polarity 58%
• Liquid Film 34%
• Surface 22%
• Convergent Beam Electron Diffraction 19%
• Atomic Force Microscopy 18%
• Molecular Beam Epitaxy 17%
• Buffer Solution 15%
• Surface Defect 14%
• Hexagonal Space Group 9%
• Transmission Electron Microscopy 7%
• Acid 4%