Investigation of defect structure of InGaNAsSb/GaAs quantum wells

L. Borkovska; N. Korsunska; V. Kladko; T. Kryshtab; V. Kushnirenko; M. Slobodyan; O. Yefanov; Ye Venger; Shane Johnson; Yu Sadofyev; Yong-Hang Zhang

doi:10.1016/j.msec.2006.06.005

Investigation of defect structure of InGaNAsSb/GaAs quantum wells

L. Borkovska, N. Korsunska, V. Kladko, T. Kryshtab, V. Kushnirenko, M. Slobodyan, O. Yefanov, Ye Venger, Shane Johnson, Yu Sadofyev, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The results of the photoluminescence (PL) and the high-resolution X-ray diffraction (HRXRD) investigations of point and extended defects in strained InGaAs(N)Sb/GaAs quantum well (QW) structures grown at 478-505 °C are presented. HRXRD studies prove a good quality of heterointerfaces in all samples that is attributed to Sb-surfactant effect. The PL investigations show that the increase of the growth temperature of N-containing QWs leads to the increase of potential fluctuations in QW due to the increase of composition disorder. In the PL spectra an intense band caused by excitonic transitions related with N-related clusters in GaAs barriers is found. HRXRD mapping in symmetrical 004 reflections reveals the oscillation of interference picture in [110] direction around the normal to (100) surface known as a "wiggle". The mapping indicates the formation of elastically coupled domains which are elongated in [-110] direction and are supposed to be cased by lateral composition modulations in the QW. It is proposed that a "wiggle" explained by the change of slopes of crystallographic planes with the depth is the result of competition of two factors - a symmetry of the surface stress tensor and a symmetry of bulk elastic moduli of a substrate material.

Original language	English (US)
Pages (from-to)	1038-1042
Number of pages	5
Journal	Materials Science and Engineering C
Volume	27
Issue number	5-8 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.msec.2006.06.005
State	Published - Sep 2007

Keywords

HRXRD
III-V semiconductors
Photoluminescence
Quantum well
Surfactant-assisted growth

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.msec.2006.06.005

Cite this

@article{e23dcac60c0a439e8de7d1b76bd2007c,

title = "Investigation of defect structure of InGaNAsSb/GaAs quantum wells",

abstract = "The results of the photoluminescence (PL) and the high-resolution X-ray diffraction (HRXRD) investigations of point and extended defects in strained InGaAs(N)Sb/GaAs quantum well (QW) structures grown at 478-505 °C are presented. HRXRD studies prove a good quality of heterointerfaces in all samples that is attributed to Sb-surfactant effect. The PL investigations show that the increase of the growth temperature of N-containing QWs leads to the increase of potential fluctuations in QW due to the increase of composition disorder. In the PL spectra an intense band caused by excitonic transitions related with N-related clusters in GaAs barriers is found. HRXRD mapping in symmetrical 004 reflections reveals the oscillation of interference picture in [110] direction around the normal to (100) surface known as a {"}wiggle{"}. The mapping indicates the formation of elastically coupled domains which are elongated in [-110] direction and are supposed to be cased by lateral composition modulations in the QW. It is proposed that a {"}wiggle{"} explained by the change of slopes of crystallographic planes with the depth is the result of competition of two factors - a symmetry of the surface stress tensor and a symmetry of bulk elastic moduli of a substrate material.",

keywords = "HRXRD, III-V semiconductors, Photoluminescence, Quantum well, Surfactant-assisted growth",

author = "L. Borkovska and N. Korsunska and V. Kladko and T. Kryshtab and V. Kushnirenko and M. Slobodyan and O. Yefanov and Ye Venger and Shane Johnson and Yu Sadofyev and Yong-Hang Zhang",

year = "2007",

month = sep,

doi = "10.1016/j.msec.2006.06.005",

language = "English (US)",

volume = "27",

pages = "1038--1042",

journal = "Materials Science and Engineering C",

issn = "0928-4931",

publisher = "Elsevier BV",

number = "5-8 SPEC. ISS.",

}

TY - JOUR

T1 - Investigation of defect structure of InGaNAsSb/GaAs quantum wells

AU - Borkovska, L.

AU - Korsunska, N.

AU - Kladko, V.

AU - Kryshtab, T.

AU - Kushnirenko, V.

AU - Slobodyan, M.

AU - Yefanov, O.

AU - Venger, Ye

AU - Johnson, Shane

AU - Sadofyev, Yu

AU - Zhang, Yong-Hang

PY - 2007/9

Y1 - 2007/9

N2 - The results of the photoluminescence (PL) and the high-resolution X-ray diffraction (HRXRD) investigations of point and extended defects in strained InGaAs(N)Sb/GaAs quantum well (QW) structures grown at 478-505 °C are presented. HRXRD studies prove a good quality of heterointerfaces in all samples that is attributed to Sb-surfactant effect. The PL investigations show that the increase of the growth temperature of N-containing QWs leads to the increase of potential fluctuations in QW due to the increase of composition disorder. In the PL spectra an intense band caused by excitonic transitions related with N-related clusters in GaAs barriers is found. HRXRD mapping in symmetrical 004 reflections reveals the oscillation of interference picture in [110] direction around the normal to (100) surface known as a "wiggle". The mapping indicates the formation of elastically coupled domains which are elongated in [-110] direction and are supposed to be cased by lateral composition modulations in the QW. It is proposed that a "wiggle" explained by the change of slopes of crystallographic planes with the depth is the result of competition of two factors - a symmetry of the surface stress tensor and a symmetry of bulk elastic moduli of a substrate material.

AB - The results of the photoluminescence (PL) and the high-resolution X-ray diffraction (HRXRD) investigations of point and extended defects in strained InGaAs(N)Sb/GaAs quantum well (QW) structures grown at 478-505 °C are presented. HRXRD studies prove a good quality of heterointerfaces in all samples that is attributed to Sb-surfactant effect. The PL investigations show that the increase of the growth temperature of N-containing QWs leads to the increase of potential fluctuations in QW due to the increase of composition disorder. In the PL spectra an intense band caused by excitonic transitions related with N-related clusters in GaAs barriers is found. HRXRD mapping in symmetrical 004 reflections reveals the oscillation of interference picture in [110] direction around the normal to (100) surface known as a "wiggle". The mapping indicates the formation of elastically coupled domains which are elongated in [-110] direction and are supposed to be cased by lateral composition modulations in the QW. It is proposed that a "wiggle" explained by the change of slopes of crystallographic planes with the depth is the result of competition of two factors - a symmetry of the surface stress tensor and a symmetry of bulk elastic moduli of a substrate material.

KW - HRXRD

KW - III-V semiconductors

KW - Photoluminescence

KW - Quantum well

KW - Surfactant-assisted growth

UR - http://www.scopus.com/inward/record.url?scp=34547765381&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547765381&partnerID=8YFLogxK

U2 - 10.1016/j.msec.2006.06.005

DO - 10.1016/j.msec.2006.06.005

M3 - Article

AN - SCOPUS:34547765381

SN - 0928-4931

VL - 27

SP - 1038

EP - 1042

JO - Materials Science and Engineering C

JF - Materials Science and Engineering C

IS - 5-8 SPEC. ISS.

ER -

Investigation of defect structure of InGaNAsSb/GaAs quantum wells

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this