Investigation of biaxial strain in strained silicon on insulator (SSOI) using high-resolution x-ray diffraction

Yeongseok Zoo, N. D. Theodore, Terry Alford

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Intrinsic biaxial strain values of strained Si on insulator (SSOI) layers were measured using symmetric Bragg-Brentano configuration (i.e., {004} 0-20scans) and asymmetric {224} rocking curves. We confirmed that the twist angle between the layer and substrate can be incorporated into the biaxial strain equations for epitaxial layers. Moreover, as the samples were annealed up to 1200°C, the tensile parallel strains increased from 0.56% to 0.7%. Since both the overlying strained Si and underlying substrate maintained a stressed state in the buried SiO2, the compressively strained oxide retained the lattice expansion of the overlying strained Si and resulted in the increasing parallel strains after annealing.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages191-196
Number of pages6
Volume994
StatePublished - 2007
EventSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Other

OtherSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
CountryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

Fingerprint

Diffraction
X rays
Epitaxial layers
Substrates
Oxides
Annealing
Strained silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Zoo, Y., Theodore, N. D., & Alford, T. (2007). Investigation of biaxial strain in strained silicon on insulator (SSOI) using high-resolution x-ray diffraction. In Materials Research Society Symposium Proceedings (Vol. 994, pp. 191-196)

Investigation of biaxial strain in strained silicon on insulator (SSOI) using high-resolution x-ray diffraction. / Zoo, Yeongseok; Theodore, N. D.; Alford, Terry.

Materials Research Society Symposium Proceedings. Vol. 994 2007. p. 191-196.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zoo, Y, Theodore, ND & Alford, T 2007, Investigation of biaxial strain in strained silicon on insulator (SSOI) using high-resolution x-ray diffraction. in Materials Research Society Symposium Proceedings. vol. 994, pp. 191-196, Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II, San Francisco, CA, United States, 4/9/07.
Zoo Y, Theodore ND, Alford T. Investigation of biaxial strain in strained silicon on insulator (SSOI) using high-resolution x-ray diffraction. In Materials Research Society Symposium Proceedings. Vol. 994. 2007. p. 191-196
Zoo, Yeongseok ; Theodore, N. D. ; Alford, Terry. / Investigation of biaxial strain in strained silicon on insulator (SSOI) using high-resolution x-ray diffraction. Materials Research Society Symposium Proceedings. Vol. 994 2007. pp. 191-196
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