Investigation of biaxial strain in strained silicon on insulator (SSOI) using high-resolution x-ray diffraction

Yeongseok Zoo, N. D. Theodore, Terry Alford

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Intrinsic biaxial strain values of strained Si on insulator (SSOI) layers were measured using symmetric Bragg-Brentano configuration (i.e., {004} 0-20scans) and asymmetric {224} rocking curves. We confirmed that the twist angle between the layer and substrate can be incorporated into the biaxial strain equations for epitaxial layers. Moreover, as the samples were annealed up to 1200°C, the tensile parallel strains increased from 0.56% to 0.7%. Since both the overlying strained Si and underlying substrate maintained a stressed state in the buried SiO2, the compressively strained oxide retained the lattice expansion of the overlying strained Si and resulted in the increasing parallel strains after annealing.

Original languageEnglish (US)
Title of host publicationSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
Pages191-196
Number of pages6
StatePublished - Dec 1 2007
EventSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Publication series

NameMaterials Research Society Symposium Proceedings
Volume994
ISSN (Print)0272-9172

Other

OtherSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
CountryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

    Fingerprint

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Zoo, Y., Theodore, N. D., & Alford, T. (2007). Investigation of biaxial strain in strained silicon on insulator (SSOI) using high-resolution x-ray diffraction. In Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II (pp. 191-196). (Materials Research Society Symposium Proceedings; Vol. 994).