Abstract
Analog Transient Radiation Effects in Electronics (ATREE) induced by high dose-rate X-ray pulses are investigated using a flash X-ray facility. The ATREEs induced in a LM124 operational amplifier configured in three different bias configurations are investigated. A predictive methodology, based upon a previously developed ASET simulation tool, is used to model the ATREE phenomena. A semiempirical physical model is used to perform the correlation between the duration of the parasitic pulse signal induced in the LM124 and an equivalent value of the high dose-rate X-ray pulse level.
| Original language | English (US) |
|---|---|
| Article number | 5658011 |
| Pages (from-to) | 3392-3399 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 57 |
| Issue number | 6 PART 1 |
| DOIs | |
| State | Published - Dec 1 2010 |
| Externally published | Yes |
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Keywords
- Bipolar analog integrated circuits
- integrated circuit modeling
- ionizing dose
- single event transient
- transient propagation
- transient response
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering
Cite this
Investigation and analysis of LM124 bipolar linear circuitry response phenomenon in pulsed X-ray environment. / Roche, Nicolas J.H.; Dusseau, L.; Vaillé, J. R.; Mekki, J.; Gonzalez Velo, Yago; Perez, S.; Boch, J.; Saigné, F.; Marec, R.; Calvel, P.; Bezerra, F.; Auriel, G.; Azaïs, B.
In: IEEE Transactions on Nuclear Science, Vol. 57, No. 6 PART 1, 5658011, 01.12.2010, p. 3392-3399.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Investigation and analysis of LM124 bipolar linear circuitry response phenomenon in pulsed X-ray environment
AU - Roche, Nicolas J.H.
AU - Dusseau, L.
AU - Vaillé, J. R.
AU - Mekki, J.
AU - Gonzalez Velo, Yago
AU - Perez, S.
AU - Boch, J.
AU - Saigné, F.
AU - Marec, R.
AU - Calvel, P.
AU - Bezerra, F.
AU - Auriel, G.
AU - Azaïs, B.
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Analog Transient Radiation Effects in Electronics (ATREE) induced by high dose-rate X-ray pulses are investigated using a flash X-ray facility. The ATREEs induced in a LM124 operational amplifier configured in three different bias configurations are investigated. A predictive methodology, based upon a previously developed ASET simulation tool, is used to model the ATREE phenomena. A semiempirical physical model is used to perform the correlation between the duration of the parasitic pulse signal induced in the LM124 and an equivalent value of the high dose-rate X-ray pulse level.
AB - Analog Transient Radiation Effects in Electronics (ATREE) induced by high dose-rate X-ray pulses are investigated using a flash X-ray facility. The ATREEs induced in a LM124 operational amplifier configured in three different bias configurations are investigated. A predictive methodology, based upon a previously developed ASET simulation tool, is used to model the ATREE phenomena. A semiempirical physical model is used to perform the correlation between the duration of the parasitic pulse signal induced in the LM124 and an equivalent value of the high dose-rate X-ray pulse level.
KW - Bipolar analog integrated circuits
KW - integrated circuit modeling
KW - ionizing dose
KW - single event transient
KW - transient propagation
KW - transient response
UR - http://www.scopus.com/inward/record.url?scp=78650410158&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78650410158&partnerID=8YFLogxK
U2 - 10.1109/TNS.2010.2089063
DO - 10.1109/TNS.2010.2089063
M3 - Article
AN - SCOPUS:78650410158
VL - 57
SP - 3392
EP - 3399
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
SN - 0018-9499
IS - 6 PART 1
M1 - 5658011
ER -