Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

Shimeng Yu, Yi Wu, H. S Philip Wong

Research output: Contribution to journalArticle

174 Citations (Scopus)

Abstract

HfOx/AlOx bilayer resistive switching devices were fabricated for the study of the switching dynamics of the metal oxide memory. An exponential voltage-time relationship was experimentally observed as follows: the programming pulse widths need for switching exponentially decreased with the increase in the programming pulse amplitudes. Two following programming schemes were proposed to modulate the high resistance state values: (1) exponentially increase the programming pulse width; (2) linearly increase the programming pulse amplitude. Although both of these schemes were effective to achieve the target resistance, the transient current response measurements suggest the second scheme consumes considerably less energy in the programming. A field-driven oxygen ions migration model was utilized to elucidate the above experimentally observed phenomenon.

Original languageEnglish (US)
Article number103514
JournalApplied Physics Letters
Volume98
Issue number10
DOIs
StatePublished - Mar 7 2011
Externally publishedYes

Fingerprint

programming
metal oxides
pulse amplitude
pulse duration
high resistance
oxygen ions
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory. / Yu, Shimeng; Wu, Yi; Wong, H. S Philip.

In: Applied Physics Letters, Vol. 98, No. 10, 103514, 07.03.2011.

Research output: Contribution to journalArticle

@article{53c6e12a0b2e4ed58f6ee698d71b522c,
title = "Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory",
abstract = "HfOx/AlOx bilayer resistive switching devices were fabricated for the study of the switching dynamics of the metal oxide memory. An exponential voltage-time relationship was experimentally observed as follows: the programming pulse widths need for switching exponentially decreased with the increase in the programming pulse amplitudes. Two following programming schemes were proposed to modulate the high resistance state values: (1) exponentially increase the programming pulse width; (2) linearly increase the programming pulse amplitude. Although both of these schemes were effective to achieve the target resistance, the transient current response measurements suggest the second scheme consumes considerably less energy in the programming. A field-driven oxygen ions migration model was utilized to elucidate the above experimentally observed phenomenon.",
author = "Shimeng Yu and Yi Wu and Wong, {H. S Philip}",
year = "2011",
month = "3",
day = "7",
doi = "10.1063/1.3564883",
language = "English (US)",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

AU - Yu, Shimeng

AU - Wu, Yi

AU - Wong, H. S Philip

PY - 2011/3/7

Y1 - 2011/3/7

N2 - HfOx/AlOx bilayer resistive switching devices were fabricated for the study of the switching dynamics of the metal oxide memory. An exponential voltage-time relationship was experimentally observed as follows: the programming pulse widths need for switching exponentially decreased with the increase in the programming pulse amplitudes. Two following programming schemes were proposed to modulate the high resistance state values: (1) exponentially increase the programming pulse width; (2) linearly increase the programming pulse amplitude. Although both of these schemes were effective to achieve the target resistance, the transient current response measurements suggest the second scheme consumes considerably less energy in the programming. A field-driven oxygen ions migration model was utilized to elucidate the above experimentally observed phenomenon.

AB - HfOx/AlOx bilayer resistive switching devices were fabricated for the study of the switching dynamics of the metal oxide memory. An exponential voltage-time relationship was experimentally observed as follows: the programming pulse widths need for switching exponentially decreased with the increase in the programming pulse amplitudes. Two following programming schemes were proposed to modulate the high resistance state values: (1) exponentially increase the programming pulse width; (2) linearly increase the programming pulse amplitude. Although both of these schemes were effective to achieve the target resistance, the transient current response measurements suggest the second scheme consumes considerably less energy in the programming. A field-driven oxygen ions migration model was utilized to elucidate the above experimentally observed phenomenon.

UR - http://www.scopus.com/inward/record.url?scp=79952640478&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952640478&partnerID=8YFLogxK

U2 - 10.1063/1.3564883

DO - 10.1063/1.3564883

M3 - Article

AN - SCOPUS:79952640478

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 103514

ER -