Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

Shimeng Yu; Yi Wu; H. S.Philip Wong

doi:10.1063/1.3564883

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

Shimeng Yu, Yi Wu, H. S.Philip Wong

Research output: Contribution to journal › Article › peer-review

254 Scopus citations

Abstract

HfO_x/AlO_x bilayer resistive switching devices were fabricated for the study of the switching dynamics of the metal oxide memory. An exponential voltage-time relationship was experimentally observed as follows: the programming pulse widths need for switching exponentially decreased with the increase in the programming pulse amplitudes. Two following programming schemes were proposed to modulate the high resistance state values: (1) exponentially increase the programming pulse width; (2) linearly increase the programming pulse amplitude. Although both of these schemes were effective to achieve the target resistance, the transient current response measurements suggest the second scheme consumes considerably less energy in the programming. A field-driven oxygen ions migration model was utilized to elucidate the above experimentally observed phenomenon.

Original language	English (US)
Article number	103514
Journal	Applied Physics Letters
Volume	98
Issue number	10
DOIs	https://doi.org/10.1063/1.3564883
State	Published - Mar 7 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3564883

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@article{53c6e12a0b2e4ed58f6ee698d71b522c,

title = "Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory",

abstract = "HfOx/AlOx bilayer resistive switching devices were fabricated for the study of the switching dynamics of the metal oxide memory. An exponential voltage-time relationship was experimentally observed as follows: the programming pulse widths need for switching exponentially decreased with the increase in the programming pulse amplitudes. Two following programming schemes were proposed to modulate the high resistance state values: (1) exponentially increase the programming pulse width; (2) linearly increase the programming pulse amplitude. Although both of these schemes were effective to achieve the target resistance, the transient current response measurements suggest the second scheme consumes considerably less energy in the programming. A field-driven oxygen ions migration model was utilized to elucidate the above experimentally observed phenomenon.",

author = "Shimeng Yu and Yi Wu and Wong, {H. S.Philip}",

note = "Funding Information: We thank Yang Chai, J. Provine, and Cambridge Nanotech for the device fabrication, SangBum Kim and Rakesh Jeyasingh for the measurement setup. This work is supported in part by DARPA SyNAPSE, the National Science Foundation (NSF ECCS Grant No. 0950305), the Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) through the NSF/NRI Supplement to the NSF NSEC Center for Probing the Nanoscale (CPN), the member companies of the Stanford Non-Volatile Memory Technology Research Initiative (NMTRI), and the C2S2 Focus Center, under the Focus Center Research Program (FCRP), an SRC subsidiary. S. Yu is additionally supported by the Stanford Graduate Fellowship. ",

year = "2011",

month = mar,

day = "7",

doi = "10.1063/1.3564883",

language = "English (US)",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

AU - Yu, Shimeng

AU - Wu, Yi

AU - Wong, H. S.Philip

N1 - Funding Information: We thank Yang Chai, J. Provine, and Cambridge Nanotech for the device fabrication, SangBum Kim and Rakesh Jeyasingh for the measurement setup. This work is supported in part by DARPA SyNAPSE, the National Science Foundation (NSF ECCS Grant No. 0950305), the Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) through the NSF/NRI Supplement to the NSF NSEC Center for Probing the Nanoscale (CPN), the member companies of the Stanford Non-Volatile Memory Technology Research Initiative (NMTRI), and the C2S2 Focus Center, under the Focus Center Research Program (FCRP), an SRC subsidiary. S. Yu is additionally supported by the Stanford Graduate Fellowship.

PY - 2011/3/7

Y1 - 2011/3/7

N2 - HfOx/AlOx bilayer resistive switching devices were fabricated for the study of the switching dynamics of the metal oxide memory. An exponential voltage-time relationship was experimentally observed as follows: the programming pulse widths need for switching exponentially decreased with the increase in the programming pulse amplitudes. Two following programming schemes were proposed to modulate the high resistance state values: (1) exponentially increase the programming pulse width; (2) linearly increase the programming pulse amplitude. Although both of these schemes were effective to achieve the target resistance, the transient current response measurements suggest the second scheme consumes considerably less energy in the programming. A field-driven oxygen ions migration model was utilized to elucidate the above experimentally observed phenomenon.

AB - HfOx/AlOx bilayer resistive switching devices were fabricated for the study of the switching dynamics of the metal oxide memory. An exponential voltage-time relationship was experimentally observed as follows: the programming pulse widths need for switching exponentially decreased with the increase in the programming pulse amplitudes. Two following programming schemes were proposed to modulate the high resistance state values: (1) exponentially increase the programming pulse width; (2) linearly increase the programming pulse amplitude. Although both of these schemes were effective to achieve the target resistance, the transient current response measurements suggest the second scheme consumes considerably less energy in the programming. A field-driven oxygen ions migration model was utilized to elucidate the above experimentally observed phenomenon.

UR - http://www.scopus.com/inward/record.url?scp=79952640478&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952640478&partnerID=8YFLogxK

U2 - 10.1063/1.3564883

DO - 10.1063/1.3564883

M3 - Article

AN - SCOPUS:79952640478

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103514

ER -

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

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