Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose

Madeline G. Esposito, Jack E. Manuel, Aymeric Privat, T. Patrick Xiao, Diana Garland, Edward Bielejec, Gyorgy Vizkelethy, Jeramy Dickerson, John Brunhaver, A. Alec Talin, David Ashby, Michael P. King, Hugh Barnaby, Michael McLain, Matthew J. Marinella

Research output: Contribution to journalArticlepeer-review

Abstract

Bulk 14-nm FinFET technology was irradiated in a heavy-ion environment (42-MeV Si ions) to study the possibility of displacement damage (DD) in scaled technology devices, resulting in drive current degradation with increased cumulative fluence. These devices were also exposed to an electron beam, proton beam, and cobalt-60 source (gamma radiation) to further elucidate the physics of the device response. Annealing measurements show minimal to no 'rebound' in the ON-state current back to its initial high value; however, the OFF-state current 'rebound' was significant for gamma radiation environments. Low-temperature experiments of the heavy-ion-irradiated devices reveal increased defect concentration as the result for mobility degradation with increased fluence. Furthermore, the subthreshold slope (SS) temperature dependence uncovers a possible mechanism of increased defect bulk traps contributing to tunneling at low temperatures. Simulation work in Silvaco technology computer-aided design (TCAD) suggests that the increased OFF-state current is a total ionizing dose (TID) effect due to oxide traps in the shallow trench isolation (STI). The significant SS elongation and ON-state current degradation could only be produced when bulk traps in the channel were added. Heavy-ion irradiation on bulk 14-nm FinFETs was found to be a combination of TID and DD effects.

Original languageEnglish (US)
Article number9402890
Pages (from-to)724-732
Number of pages9
JournalIEEE Transactions on Nuclear Science
Volume68
Issue number5
DOIs
StatePublished - May 2021

Keywords

  • 14-nm bulk FinFET
  • Silvaco
  • annealing
  • cryogenic measurements
  • device simulation modeling
  • displacement damage (DD)
  • mobility degradation
  • technology computer-aided design (TCAD)
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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