Inverted metamorphic InGaAsP/InGaAs dual-junction solar cells towards full solar spectrum harvesting

Suho Park; Martha McCartney; David J. Smith; Jiyeon Jeon; Yeongho Kim; Sang Jun Lee

doi:10.1039/d2ta01603f

Inverted metamorphic InGaAsP/InGaAs dual-junction solar cells towards full solar spectrum harvesting

Suho Park, Martha McCartney, David J. Smith, Jiyeon Jeon, Yeongho Kim, Sang Jun Lee

Physics

Research output: Contribution to journal › Article › peer-review

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Abstract

An InGaAsP (1.04 eV)/InGaAs (0.54 eV) dual-junction solar cell, monolithically grown in an inverted configuration on an InP substrate, has been demonstrated. Five metamorphic compositionally graded buffers of InAs_xP_1−x are used to transition from the InP lattice constant to that of the In_0.74Ga_0.26As bottom cell. The InAs_0.45P_0.55 buffer, lattice-matched to In_0.74Ga_0.26As, has a surface crosshatch pattern with an rms roughness of 2.1 and 4.7 nm along the in-plane [110] and [11̄0] directions, respectively, due to different lateral growth rates under high As pressure. Cross-section observations using transmission electron microscopy indicate a major reduction in the density of misfit and threading dislocations across the metamorphic InAs_xP_1−x structure. The formation of crystalline defects in the n⁺-InAsP buffers induces a strain relaxation of ∼95% in the bottom cell with a relaxed lattice constant of 5.9563 Å. The reverse saturation current and ideality factor of the bottom cell are increased because of enhanced nonradiative recombination at threading dislocations with a density of 2 × 10⁶ cm⁻². Under AM 1.5G illumination, the dual-junction solar cell with extended absorption wavelengths up to 2400 nm has a photovoltaic conversion efficiency of 5.49% with an open-circuit voltage of 0.70 V, a short-circuit current density of 9.86 mA cm⁻², and a fill factor of 80.12%.

Original language	English (US)
Pages (from-to)	13106-13113
Number of pages	8
Journal	Journal of Materials Chemistry A
Volume	10
Issue number	24
DOIs	https://doi.org/10.1039/d2ta01603f
State	Published - May 26 2022

ASJC Scopus subject areas

General Chemistry
Renewable Energy, Sustainability and the Environment
General Materials Science

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10.1039/d2ta01603f

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@article{d9f9f10acc2542cbbc464c2e116cd568,

title = "Inverted metamorphic InGaAsP/InGaAs dual-junction solar cells towards full solar spectrum harvesting",

abstract = "An InGaAsP (1.04 eV)/InGaAs (0.54 eV) dual-junction solar cell, monolithically grown in an inverted configuration on an InP substrate, has been demonstrated. Five metamorphic compositionally graded buffers of InAsxP1−x are used to transition from the InP lattice constant to that of the In0.74Ga0.26As bottom cell. The InAs0.45P0.55 buffer, lattice-matched to In0.74Ga0.26As, has a surface crosshatch pattern with an rms roughness of 2.1 and 4.7 nm along the in-plane [110] and [1{\=1}0] directions, respectively, due to different lateral growth rates under high As pressure. Cross-section observations using transmission electron microscopy indicate a major reduction in the density of misfit and threading dislocations across the metamorphic InAsxP1−x structure. The formation of crystalline defects in the n+-InAsP buffers induces a strain relaxation of ∼95% in the bottom cell with a relaxed lattice constant of 5.9563 {\AA}. The reverse saturation current and ideality factor of the bottom cell are increased because of enhanced nonradiative recombination at threading dislocations with a density of 2 × 106 cm−2. Under AM 1.5G illumination, the dual-junction solar cell with extended absorption wavelengths up to 2400 nm has a photovoltaic conversion efficiency of 5.49% with an open-circuit voltage of 0.70 V, a short-circuit current density of 9.86 mA cm−2, and a fill factor of 80.12%.",

author = "Suho Park and Martha McCartney and Smith, {David J.} and Jiyeon Jeon and Yeongho Kim and Lee, {Sang Jun}",

note = "Funding Information: M. R. M. and D. J. S. acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. This research was supported by the Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT [grant number NRF-2018M3A7B4069994 and NRF-2021M3H4A6A02045426]; and the characterization platform for advanced materials funded by the Korea Research Institute of Standards and Science [grant number KRISS-2022-GP2022-0013]. This work was supported by the UST Young Scientist Research Program 2021 through the University of Science and Technology [grant number 2021YS30]. Publisher Copyright: {\textcopyright} 2022 The Royal Society of Chemistry",

year = "2022",

month = may,

day = "26",

doi = "10.1039/d2ta01603f",

language = "English (US)",

volume = "10",

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T1 - Inverted metamorphic InGaAsP/InGaAs dual-junction solar cells towards full solar spectrum harvesting

AU - Park, Suho

AU - McCartney, Martha

AU - Smith, David J.

AU - Jeon, Jiyeon

AU - Kim, Yeongho

AU - Lee, Sang Jun

N1 - Funding Information: M. R. M. and D. J. S. acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. This research was supported by the Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT [grant number NRF-2018M3A7B4069994 and NRF-2021M3H4A6A02045426]; and the characterization platform for advanced materials funded by the Korea Research Institute of Standards and Science [grant number KRISS-2022-GP2022-0013]. This work was supported by the UST Young Scientist Research Program 2021 through the University of Science and Technology [grant number 2021YS30]. Publisher Copyright: © 2022 The Royal Society of Chemistry

PY - 2022/5/26

Y1 - 2022/5/26

N2 - An InGaAsP (1.04 eV)/InGaAs (0.54 eV) dual-junction solar cell, monolithically grown in an inverted configuration on an InP substrate, has been demonstrated. Five metamorphic compositionally graded buffers of InAsxP1−x are used to transition from the InP lattice constant to that of the In0.74Ga0.26As bottom cell. The InAs0.45P0.55 buffer, lattice-matched to In0.74Ga0.26As, has a surface crosshatch pattern with an rms roughness of 2.1 and 4.7 nm along the in-plane [110] and [11̄0] directions, respectively, due to different lateral growth rates under high As pressure. Cross-section observations using transmission electron microscopy indicate a major reduction in the density of misfit and threading dislocations across the metamorphic InAsxP1−x structure. The formation of crystalline defects in the n+-InAsP buffers induces a strain relaxation of ∼95% in the bottom cell with a relaxed lattice constant of 5.9563 Å. The reverse saturation current and ideality factor of the bottom cell are increased because of enhanced nonradiative recombination at threading dislocations with a density of 2 × 106 cm−2. Under AM 1.5G illumination, the dual-junction solar cell with extended absorption wavelengths up to 2400 nm has a photovoltaic conversion efficiency of 5.49% with an open-circuit voltage of 0.70 V, a short-circuit current density of 9.86 mA cm−2, and a fill factor of 80.12%.

AB - An InGaAsP (1.04 eV)/InGaAs (0.54 eV) dual-junction solar cell, monolithically grown in an inverted configuration on an InP substrate, has been demonstrated. Five metamorphic compositionally graded buffers of InAsxP1−x are used to transition from the InP lattice constant to that of the In0.74Ga0.26As bottom cell. The InAs0.45P0.55 buffer, lattice-matched to In0.74Ga0.26As, has a surface crosshatch pattern with an rms roughness of 2.1 and 4.7 nm along the in-plane [110] and [11̄0] directions, respectively, due to different lateral growth rates under high As pressure. Cross-section observations using transmission electron microscopy indicate a major reduction in the density of misfit and threading dislocations across the metamorphic InAsxP1−x structure. The formation of crystalline defects in the n+-InAsP buffers induces a strain relaxation of ∼95% in the bottom cell with a relaxed lattice constant of 5.9563 Å. The reverse saturation current and ideality factor of the bottom cell are increased because of enhanced nonradiative recombination at threading dislocations with a density of 2 × 106 cm−2. Under AM 1.5G illumination, the dual-junction solar cell with extended absorption wavelengths up to 2400 nm has a photovoltaic conversion efficiency of 5.49% with an open-circuit voltage of 0.70 V, a short-circuit current density of 9.86 mA cm−2, and a fill factor of 80.12%.

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JO - Journal of Materials Chemistry A

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Inverted metamorphic InGaAsP/InGaAs dual-junction solar cells towards full solar spectrum harvesting

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