INVERSION LAYER TRANSPORT AND PROPERTIES OF OXIDES ON InAs.

D. A. Baglee; D. K. Ferry; C. W. Wilmsen

doi:10.1116/1.570585

INVERSION LAYER TRANSPORT AND PROPERTIES OF OXIDES ON InAs.

D. A. Baglee, D. K. Ferry, C. W. Wilmsen

Research output: Contribution to journal › Conference article › peer-review

27 Scopus citations

Abstract

Inversion layer transport in p-type InAs at 77 K using Van der Pauw samples has been studied with anodic oxides and sputtered SiO//2 as the gate insulators. It has been found that there is a correlation between the surface transport measurements, the fixed charge in the oxide, and possibly the insulating properties of the oxide. An attempt is made to develop a model to interrelate these measurements. It is shown that fixed oxide charge appears to be the dominant mechanism in limiting the mobility at low surface carrier concentrations, while at higher concentrations surface roughness is the dominant mechanism.

Original language	English (US)
Pages (from-to)	1032-1036
Number of pages	5
Journal	Journal of vacuum science & technology
Volume	17
Issue number	5
DOIs	https://doi.org/10.1116/1.570585
State	Published - 1980
Externally published	Yes
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th - Estes Park, CO, USA Duration: Jan 29 1980 → Jan 31 1980

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General Engineering

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title = "INVERSION LAYER TRANSPORT AND PROPERTIES OF OXIDES ON InAs.",

abstract = "Inversion layer transport in p-type InAs at 77 K using Van der Pauw samples has been studied with anodic oxides and sputtered SiO//2 as the gate insulators. It has been found that there is a correlation between the surface transport measurements, the fixed charge in the oxide, and possibly the insulating properties of the oxide. An attempt is made to develop a model to interrelate these measurements. It is shown that fixed oxide charge appears to be the dominant mechanism in limiting the mobility at low surface carrier concentrations, while at higher concentrations surface roughness is the dominant mechanism.",

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AU - Baglee, D. A.

AU - Ferry, D. K.

AU - Wilmsen, C. W.

PY - 1980

Y1 - 1980

N2 - Inversion layer transport in p-type InAs at 77 K using Van der Pauw samples has been studied with anodic oxides and sputtered SiO//2 as the gate insulators. It has been found that there is a correlation between the surface transport measurements, the fixed charge in the oxide, and possibly the insulating properties of the oxide. An attempt is made to develop a model to interrelate these measurements. It is shown that fixed oxide charge appears to be the dominant mechanism in limiting the mobility at low surface carrier concentrations, while at higher concentrations surface roughness is the dominant mechanism.

AB - Inversion layer transport in p-type InAs at 77 K using Van der Pauw samples has been studied with anodic oxides and sputtered SiO//2 as the gate insulators. It has been found that there is a correlation between the surface transport measurements, the fixed charge in the oxide, and possibly the insulating properties of the oxide. An attempt is made to develop a model to interrelate these measurements. It is shown that fixed oxide charge appears to be the dominant mechanism in limiting the mobility at low surface carrier concentrations, while at higher concentrations surface roughness is the dominant mechanism.

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EP - 1036

JO - Journal of vacuum science & technology

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T2 - Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th

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ER -

INVERSION LAYER TRANSPORT AND PROPERTIES OF OXIDES ON InAs.

Abstract

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