Inversion layer transport in p-type InAs at 77 K using Van der Pauw samples has been studied with anodic oxides and sputtered SiO//2 as the gate insulators. It has been found that there is a correlation between the surface transport measurements, the fixed charge in the oxide, and possibly the insulating properties of the oxide. An attempt is made to develop a model to interrelate these measurements. It is shown that fixed oxide charge appears to be the dominant mechanism in limiting the mobility at low surface carrier concentrations, while at higher concentrations surface roughness is the dominant mechanism.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of vacuum science & technology|
|State||Published - Jan 1 1980|
|Event||Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th - Estes Park, CO, USA|
Duration: Jan 29 1980 → Jan 31 1980
ASJC Scopus subject areas