INVERSION LAYER TRANSPORT AND PROPERTIES OF OXIDES ON InAs.

D. A. Baglee, D. K. Ferry, C. W. Wilmsen

Research output: Contribution to journalConference article

27 Scopus citations

Abstract

Inversion layer transport in p-type InAs at 77 K using Van der Pauw samples has been studied with anodic oxides and sputtered SiO//2 as the gate insulators. It has been found that there is a correlation between the surface transport measurements, the fixed charge in the oxide, and possibly the insulating properties of the oxide. An attempt is made to develop a model to interrelate these measurements. It is shown that fixed oxide charge appears to be the dominant mechanism in limiting the mobility at low surface carrier concentrations, while at higher concentrations surface roughness is the dominant mechanism.

Original languageEnglish (US)
Pages (from-to)1032-1036
Number of pages5
JournalJournal of vacuum science & technology
Volume17
Issue number5
DOIs
StatePublished - Jan 1 1980
EventProc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th - Estes Park, CO, USA
Duration: Jan 29 1980Jan 31 1980

ASJC Scopus subject areas

  • Engineering(all)

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