Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters

Yuh Shiuan Liu, Tsung Ting Kao, Md Mahbub Satter, Zachary Lochner, Shyh Chiang Shen, Theeradetch Detchprohm, P. Douglas Yoder, Russell D. Dupuis, Jae Hyun Ryou, Alec M. Fischer, Yong O. Wei, Hongen Xie, Fernando Ponce

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report a high-aluminum-containing ([Al] ∼0.6) AlGaN multiple-quantum well (MQW) double-heterojunction (DH) emitter employing an inverse-tapered-composition AlGaN:Mg p-type waveguide grown on a c plane Al-polar AlN bulk substrate. Using numerical simulations, we have determined that the inverse-tapered p-type waveguide design is necessary for high [Al] containing p-n junction devices as any valence band discontinuity at the junction will limit the vertical hole transport and induce a larger voltage-drop across the structure. The fabricated ultraviolet MQW DH emitter can sustain a DC current of at least 500 mA and a pulsed current of at least 1.07 A, which corresponds to a current density of 10 and 18 kA/cm ^{2} at maximum measured voltage of 15 and 20 V with the measured series resistance of 15 and 11 Ω , respectively.

Original languageEnglish (US)
Article number7120925
Pages (from-to)1768-1771
Number of pages4
JournalIEEE Photonics Technology Letters
Volume27
Issue number16
DOIs
StatePublished - Aug 15 2015

Fingerprint

Aluminum
emitters
Waveguides
waveguides
aluminum
Semiconductor quantum wells
Heterojunctions
heterojunctions
quantum wells
electric potential
Valence bands
p-n junctions
discontinuity
Current density
direct current
current density
valence
Computer simulation
Electric potential
Substrates

Keywords

  • AlGaN active layer
  • AlN substrate
  • deep ultraviolet laser diodes
  • epitaxial growth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

Liu, Y. S., Kao, T. T., Satter, M. M., Lochner, Z., Shen, S. C., Detchprohm, T., ... Ponce, F. (2015). Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters. IEEE Photonics Technology Letters, 27(16), 1768-1771. [7120925]. https://doi.org/10.1109/LPT.2015.2443053

Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters. / Liu, Yuh Shiuan; Kao, Tsung Ting; Satter, Md Mahbub; Lochner, Zachary; Shen, Shyh Chiang; Detchprohm, Theeradetch; Yoder, P. Douglas; Dupuis, Russell D.; Ryou, Jae Hyun; Fischer, Alec M.; Wei, Yong O.; Xie, Hongen; Ponce, Fernando.

In: IEEE Photonics Technology Letters, Vol. 27, No. 16, 7120925, 15.08.2015, p. 1768-1771.

Research output: Contribution to journalArticle

Liu, YS, Kao, TT, Satter, MM, Lochner, Z, Shen, SC, Detchprohm, T, Yoder, PD, Dupuis, RD, Ryou, JH, Fischer, AM, Wei, YO, Xie, H & Ponce, F 2015, 'Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters', IEEE Photonics Technology Letters, vol. 27, no. 16, 7120925, pp. 1768-1771. https://doi.org/10.1109/LPT.2015.2443053
Liu YS, Kao TT, Satter MM, Lochner Z, Shen SC, Detchprohm T et al. Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters. IEEE Photonics Technology Letters. 2015 Aug 15;27(16):1768-1771. 7120925. https://doi.org/10.1109/LPT.2015.2443053
Liu, Yuh Shiuan ; Kao, Tsung Ting ; Satter, Md Mahbub ; Lochner, Zachary ; Shen, Shyh Chiang ; Detchprohm, Theeradetch ; Yoder, P. Douglas ; Dupuis, Russell D. ; Ryou, Jae Hyun ; Fischer, Alec M. ; Wei, Yong O. ; Xie, Hongen ; Ponce, Fernando. / Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters. In: IEEE Photonics Technology Letters. 2015 ; Vol. 27, No. 16. pp. 1768-1771.
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