Inverse modeling of oxid deposition using measurements of a TEOS CVD process

A. Sheikholeslami; S. Holzer; C. Heitzinger; M. Leicht; O. Häberlen; J. Fugger; T. Grasser; S. Selberherr

doi:10.1109/RME.2005.1542941

Inverse modeling of oxid deposition using measurements of a TEOS CVD process

A. Sheikholeslami, S. Holzer, C. Heitzinger, M. Leicht, O. Häberlen, J. Fugger, T. Grasser, S. Selberherr

CLAS-NS: Mathematics and Statistical Sciences, School of (SMSS)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The goal of this paper is to identify simulation models for the deposition of silicon dioxide layers from TEOS (Tetraethoxysilane) in a CVD (Chemical Vapor Deposition) process and to calibrate the parameters of these models by comparing simulation results to SEM (Scanning Electron Microscope) images of deposited layers in trenches with different aspect ratios. We describe the three models used and the parameters which lead to the best results for each model which allows us to draw conclusions on the usefulness of the models.

Original language	English (US)
Title of host publication	2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference
Pages	279-282
Number of pages	4
DOIs	https://doi.org/10.1109/RME.2005.1542941
State	Published - Dec 1 2005
Event	2005 PhD Research in Microelectronics and Electronics Conference - Lausanne, Switzerland Duration: Jul 25 2005 → Jul 28 2005

Publication series

Name	2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference
Volume	II

Other

Other	2005 PhD Research in Microelectronics and Electronics Conference
Country	Switzerland
City	Lausanne
Period	7/25/05 → 7/28/05

ASJC Scopus subject areas

Engineering(all)

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Sheikholeslami, A., Holzer, S., Heitzinger, C., Leicht, M., Häberlen, O., Fugger, J., Grasser, T., & Selberherr, S. (2005). Inverse modeling of oxid deposition using measurements of a TEOS CVD process. In 2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference (pp. 279-282). [1542941] (2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference; Vol. II). https://doi.org/10.1109/RME.2005.1542941

Inverse modeling of oxid deposition using measurements of a TEOS CVD process. / Sheikholeslami, A.; Holzer, S.; Heitzinger, C.; Leicht, M.; Häberlen, O.; Fugger, J.; Grasser, T.; Selberherr, S.

2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference. 2005. p. 279-282 1542941 (2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference; Vol. II).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sheikholeslami, A, Holzer, S, Heitzinger, C, Leicht, M, Häberlen, O, Fugger, J, Grasser, T & Selberherr, S 2005, Inverse modeling of oxid deposition using measurements of a TEOS CVD process. in 2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference., 1542941, 2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference, vol. II, pp. 279-282, 2005 PhD Research in Microelectronics and Electronics Conference, Lausanne, Switzerland, 7/25/05. https://doi.org/10.1109/RME.2005.1542941

Sheikholeslami A, Holzer S, Heitzinger C, Leicht M, Häberlen O, Fugger J et al. Inverse modeling of oxid deposition using measurements of a TEOS CVD process. In 2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference. 2005. p. 279-282. 1542941. (2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference). https://doi.org/10.1109/RME.2005.1542941

Sheikholeslami, A. ; Holzer, S. ; Heitzinger, C. ; Leicht, M. ; Häberlen, O. ; Fugger, J. ; Grasser, T. ; Selberherr, S. / Inverse modeling of oxid deposition using measurements of a TEOS CVD process. 2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference. 2005. pp. 279-282 (2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference).

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Inverse modeling of oxid deposition using measurements of a TEOS CVD process

Abstract

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