Inverse modeling of oxid deposition using measurements of a TEOS CVD process

A. Sheikholeslami, S. Holzer, C. Heitzinger, M. Leicht, O. Häberlen, J. Fugger, T. Grasser, S. Selberherr

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The goal of this paper is to identify simulation models for the deposition of silicon dioxide layers from TEOS (Tetraethoxysilane) in a CVD (Chemical Vapor Deposition) process and to calibrate the parameters of these models by comparing simulation results to SEM (Scanning Electron Microscope) images of deposited layers in trenches with different aspect ratios. We describe the three models used and the parameters which lead to the best results for each model which allows us to draw conclusions on the usefulness of the models.

Original languageEnglish (US)
Title of host publication2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference
Pages279-282
Number of pages4
DOIs
StatePublished - Dec 1 2005
Event2005 PhD Research in Microelectronics and Electronics Conference - Lausanne, Switzerland
Duration: Jul 25 2005Jul 28 2005

Publication series

Name2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference
VolumeII

Other

Other2005 PhD Research in Microelectronics and Electronics Conference
CountrySwitzerland
CityLausanne
Period7/25/057/28/05

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Inverse modeling of oxid deposition using measurements of a TEOS CVD process'. Together they form a unique fingerprint.

  • Cite this

    Sheikholeslami, A., Holzer, S., Heitzinger, C., Leicht, M., Häberlen, O., Fugger, J., Grasser, T., & Selberherr, S. (2005). Inverse modeling of oxid deposition using measurements of a TEOS CVD process. In 2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference (pp. 279-282). [1542941] (2005 PhD Research in Microelectronics and Electronics - Proceedingsof the Conference; Vol. II). https://doi.org/10.1109/RME.2005.1542941