Intrinsic variability in nano-CMOS design and beyond

Yu Cao; Chi Chao Wang; Yun Ye; Samatha Gummalla; Chaitali Chakrabarti

doi:10.1109/IEDM.2010.5703382

Intrinsic variability in nano-CMOS design and beyond

Yu Cao, Chi Chao Wang, Yun Ye, Samatha Gummalla, Chaitali Chakrabarti

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	17.5.1
DOIs	https://doi.org/10.1109/IEDM.2010.5703382
State	Published - Dec 1 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: Dec 6 2010 → Dec 8 2010

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country	United States
City	San Francisco, CA
Period	12/6/10 → 12/8/10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2010.5703382

Cite this

Cao, Y., Wang, C. C., Ye, Y., Gummalla, S., & Chakrabarti, C. (2010). Intrinsic variability in nano-CMOS design and beyond. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 17.5.1). [5703382] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703382

Intrinsic variability in nano-CMOS design and beyond. / Cao, Yu; Wang, Chi Chao; Ye, Yun; Gummalla, Samatha; Chakrabarti, Chaitali.

2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 17.5.1 5703382 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cao, Y, Wang, CC, Ye, Y, Gummalla, S & Chakrabarti, C 2010, Intrinsic variability in nano-CMOS design and beyond. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703382, Technical Digest - International Electron Devices Meeting, IEDM, pp. 17.5.1, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 12/6/10. https://doi.org/10.1109/IEDM.2010.5703382

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