| Original language | English (US) |
|---|---|
| Title of host publication | Technical Digest - International Electron Devices Meeting, IEDM |
| DOIs | |
| State | Published - 2010 |
| Event | 2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: Dec 6 2010 → Dec 8 2010 |
Other
| Other | 2010 IEEE International Electron Devices Meeting, IEDM 2010 |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 12/6/10 → 12/8/10 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
Cite this
Intrinsic variability in nano-CMOS design and beyond. / Cao, Yu; Wang, Chi Chao; Ye, Yun; Gummalla, Samatha; Chakrabarti, Chaitali.
Technical Digest - International Electron Devices Meeting, IEDM. 2010. 5703382.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Intrinsic variability in nano-CMOS design and beyond
AU - Cao, Yu
AU - Wang, Chi Chao
AU - Ye, Yun
AU - Gummalla, Samatha
AU - Chakrabarti, Chaitali
PY - 2010
Y1 - 2010
UR - http://www.scopus.com/inward/record.url?scp=79951848756&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79951848756&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2010.5703382
DO - 10.1109/IEDM.2010.5703382
M3 - Conference contribution
AN - SCOPUS:79951848756
SN - 9781424474196
BT - Technical Digest - International Electron Devices Meeting, IEDM
ER -