Intrinsic stable orbits in open quantum dots

J. P. Bird; R. Akis; D. K. Ferry; J. Cooper; K. Ishibashi; Y. Ochiai; Y. Aoyagi; T. Sugano

doi:10.1088/0268-1242/13/8A/003

Intrinsic stable orbits in open quantum dots

J. P. Bird, R. Akis, D. K. Ferry, J. Cooper, K. Ishibashi, Y. Ochiai, Y. Aoyagi, T. Sugano

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6 Scopus citations

Abstract

The conductance of open quantum dot devices is shown to reveal a series of strikingly periodic oscillations as the negative bias applied to their defining gates is varied at zero magnetic field. These surprisingly regular oscillations persist with unaltered characteristics over a wide range of gate voltages, suggesting that the intrinsic transport properties of these devices are dominated by the selective excitation of a small number of stable orbits.

Original language	English (US)
Pages (from-to)	A4-A6
Journal	Semiconductor Science and Technology
Volume	13
Issue number	8 SUPPL. A
DOIs	https://doi.org/10.1088/0268-1242/13/8A/003
State	Published - 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Cite this

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title = "Intrinsic stable orbits in open quantum dots",

abstract = "The conductance of open quantum dot devices is shown to reveal a series of strikingly periodic oscillations as the negative bias applied to their defining gates is varied at zero magnetic field. These surprisingly regular oscillations persist with unaltered characteristics over a wide range of gate voltages, suggesting that the intrinsic transport properties of these devices are dominated by the selective excitation of a small number of stable orbits.",

author = "Bird, {J. P.} and R. Akis and Ferry, {D. K.} and J. Cooper and K. Ishibashi and Y. Ochiai and Y. Aoyagi and T. Sugano",

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T1 - Intrinsic stable orbits in open quantum dots

AU - Bird, J. P.

AU - Akis, R.

AU - Ferry, D. K.

AU - Cooper, J.

AU - Ishibashi, K.

AU - Ochiai, Y.

AU - Aoyagi, Y.

AU - Sugano, T.

PY - 1998

Y1 - 1998

N2 - The conductance of open quantum dot devices is shown to reveal a series of strikingly periodic oscillations as the negative bias applied to their defining gates is varied at zero magnetic field. These surprisingly regular oscillations persist with unaltered characteristics over a wide range of gate voltages, suggesting that the intrinsic transport properties of these devices are dominated by the selective excitation of a small number of stable orbits.

AB - The conductance of open quantum dot devices is shown to reveal a series of strikingly periodic oscillations as the negative bias applied to their defining gates is varied at zero magnetic field. These surprisingly regular oscillations persist with unaltered characteristics over a wide range of gate voltages, suggesting that the intrinsic transport properties of these devices are dominated by the selective excitation of a small number of stable orbits.

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JO - Semiconductor Science and Technology

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ER -

Intrinsic stable orbits in open quantum dots

Abstract

ASJC Scopus subject areas

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