Intrinsic stable orbits in open quantum dots

J. P. Bird, R. Akis, D. K. Ferry, J. Cooper, K. Ishibashi, Y. Ochiai, Y. Aoyagi, T. Sugano

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The conductance of open quantum dot devices is shown to reveal a series of strikingly periodic oscillations as the negative bias applied to their defining gates is varied at zero magnetic field. These surprisingly regular oscillations persist with unaltered characteristics over a wide range of gate voltages, suggesting that the intrinsic transport properties of these devices are dominated by the selective excitation of a small number of stable orbits.

Original languageEnglish (US)
Pages (from-to)A4-A6
JournalSemiconductor Science and Technology
Volume13
Issue number8 SUPPL. A
DOIs
StatePublished - Jan 1 1998

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Bird, J. P., Akis, R., Ferry, D. K., Cooper, J., Ishibashi, K., Ochiai, Y., Aoyagi, Y., & Sugano, T. (1998). Intrinsic stable orbits in open quantum dots. Semiconductor Science and Technology, 13(8 SUPPL. A), A4-A6. https://doi.org/10.1088/0268-1242/13/8A/003