Abstract

In this work, we report the limit of intrinsic mobility that can be achieved in graphene at room temperature. Experimental measurements confirmed that the carrier mobility in graphene is primarily affected by the charged impurity present in the system. Intrinsic phonon limited mobility can be achieved when this effect is negligible. The values of the coupling constants for the phonon scatterings were extracted from fitting measured data. Absolute theoretical limit of intrinsic mobility was found from our simulation to be 200,000 cm2/Vs at the Dirac point at room temperature.

Original languageEnglish (US)
Title of host publication2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
Pages21-24
Number of pages4
StatePublished - Dec 1 2009
Event2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 - Genoa, Italy
Duration: Jul 26 2009Jul 30 2009

Publication series

Name2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Other

Other2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
CountryItaly
CityGenoa
Period7/26/097/30/09

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ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering

Cite this

Shishir, R. S., Ferry, D. K., & Goodnick, S. (2009). Intrinsic mobility limit in graphene at room temperature. In 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 (pp. 21-24). [5394545] (2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009).