Intersubband transitions of optically excited excitons in quantum wells

Rosana Rodrigues, Ralph A. Höpfel, Y. Iimura, T. Yasui, Y. Segawa, Y. Aoyagi, S. M. Goodnick

Research output: Contribution to journalConference article

Abstract

We have experimentally studied the time-evolution of the exciton population in a higher subband of GaAs quantum wells, below the free carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130 ± 20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. The exciton lifetime in the second heavy-hole subband is considerably longer than reported values of the recombination time in the lowest exciton state at k = 0. The excitons in the higher subband at k = 0 can be excited selectively without exciting the lower subband at k > 0. From these findings we conclude that subband transitions of excitons in quantum wells represent a new appealing concept for optically pumped coherent sources in the meV range.

Original languageEnglish (US)
Pages (from-to)395-403
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1985
DOIs
StatePublished - Jan 1 1993
Externally publishedYes
EventPhysical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy
Duration: May 23 1993May 28 1993

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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