Intersubband transitions in narrow InAs/AlSb quantum wells

D. C. Larrabee, J. Tang, M. Liang, G. A. Khodaparast, Junichiro Kono, K. Ueda, Y. Nakajima, O. Suekane, S. Sasa, M. Inoue, K. I. Kolokolov, J. Li, C. Z. Ning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated intersubband transitions (ISBTs) in InAs/AlSb multiple quantum wells. In wells from 7 to 10 nm wide, the ISBT energy increases with decreasing well width and temperature. We do not observe photoluminescence (PL) from these wells. In wells from 2.4 to 6 nm wide, we observe PL but not ISBTs. We have calculated the band structure of these samples using an 8 band k.p theory including strain and many-body effects. We have modelled the dependence of the ISBT energy on well width and temperature. In addition, we have observed the effects on ISBTs of QW interface type and Si doping in the well.

Original languageEnglish (US)
Title of host publicationProceedings IEEE Lester Eastman Conference on High Performance Devices
Pages324-333
Number of pages10
StatePublished - Dec 1 2002
Externally publishedYes
EventProceedings IEEE Lester Eastman Conference on High Performance Devices - Newark, DE, United States
Duration: Aug 6 2002Aug 8 2002

Publication series

NameProceedings IEEE Lester Eastman Conference on High Performance Devices

Other

OtherProceedings IEEE Lester Eastman Conference on High Performance Devices
CountryUnited States
CityNewark, DE
Period8/6/028/8/02

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Larrabee, D. C., Tang, J., Liang, M., Khodaparast, G. A., Kono, J., Ueda, K., Nakajima, Y., Suekane, O., Sasa, S., Inoue, M., Kolokolov, K. I., Li, J., & Ning, C. Z. (2002). Intersubband transitions in narrow InAs/AlSb quantum wells. In Proceedings IEEE Lester Eastman Conference on High Performance Devices (pp. 324-333). (Proceedings IEEE Lester Eastman Conference on High Performance Devices).