Abstract
We have studied intersubband transitions in InAs/AlSb quantum wells experimentally and theoretically. Experimentally, we performed polarization-resolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature (from 4 K to room temperature) and quantum well width (from a few nm to 10 nm). To understand experimental results, we performed a self-consistent 8-band k·p band-structure calculation including spatial charge separation. Based on the calculated band structure, we developed a set of density matrix equations to compute TE and TM optical transitions self-consistently, including both interband and intersubband channels. This density matrix formalism is also ideal for the inclusion of various many-body effects, which are known to be important for intersubband transitions. Detailed comparison between experimental data and theoretical simulations is presented.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | B.D. Weaver, M.O. Manasreh, C. Jagadish, S. Zollner |
Pages | 571-582 |
Number of pages | 12 |
Volume | 744 |
State | Published - 2002 |
Externally published | Yes |
Event | Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: Dec 2 2002 → Dec 5 2002 |
Other
Other | Quantum Confined Semiconductor Nanostructures |
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Country/Territory | United States |
City | Boston MA |
Period | 12/2/02 → 12/5/02 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials