Intersubband relaxation of heavy-hole excitons in GaAs quantum wells

R. A. Höpfel, R. Rodrigues, Y. Iimura, T. Yasui, Y. Segawa, Y. Aoyagi, S. M. Goodnick

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

The temporal dynamics of an exciton in a higher quantum-well subband is observed. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130±20 ps, in agreement with theoretical estimations of intersubband scattering by acoustic-phonon emission. Consequences for intersubband lasers are substantial.

Original languageEnglish (US)
Pages (from-to)10943-10946
Number of pages4
JournalPhysical Review B
Volume47
Issue number16
DOIs
StatePublished - Jan 1 1993
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Höpfel, R. A., Rodrigues, R., Iimura, Y., Yasui, T., Segawa, Y., Aoyagi, Y., & Goodnick, S. M. (1993). Intersubband relaxation of heavy-hole excitons in GaAs quantum wells. Physical Review B, 47(16), 10943-10946. https://doi.org/10.1103/PhysRevB.47.10943