Intersubband device applications of nitride quantum structures

Roberto Paiella, Kristina Driscoll, Yan Li, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David Smith, Enrico Bellotti, Theodore D. Moustakas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Nitride semiconductor quantum structures feature some unique properties for intersubband device development, including a record large conduction-band offset that allows extending the operating wavelength to the near-infrared spectral region, and large optical phonon energies that are advantageous for the development of THz devices. In this paper we review our recent work aimed at the demonstration of novel intersubband device functionalities using these materials. In particular, we have developed ultrafast all-optical switching devices operating at fiber-optic communication wavelengths, based on intersubband cross-absorption saturation in GaN/AlN quantum-well waveguides. Strong self-phase modulation of ultrafast optical pulses has also been measured in these waveguides, revealing a large intersubband refractive-index nonlinearity which is also promising for all-optical switching applications. Furthermore, we have demonstrated optically pumped intersubband light emission from GaN/AlN quantum wells at the record short wavelength of about 2 μm. Finally, we have used a rigorous Monte Carlo model to show that GaN/AlGaN quantum wells are promising for the development of THz quantum cascade lasers capable in principle of operation without cryogenic cooling.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7608
DOIs
StatePublished - 2010
EventQuantum Sensing and Nanophotonic Devices VII - San Francisco, CA, United States
Duration: Jan 24 2010Jan 28 2010

Other

OtherQuantum Sensing and Nanophotonic Devices VII
CountryUnited States
CitySan Francisco, CA
Period1/24/101/28/10

Fingerprint

Nitrides
Semiconductor quantum wells
nitrides
Quantum Well
Optical Switching
Aluminum Nitride
Wavelength
quantum wells
Waveguides
optical switching
Self phase modulation
Waveguide
Quantum cascade lasers
Light emission
Fiber Optics Communications
wavelengths
cryogenic cooling
Self-phase Modulation
waveguides
Conduction bands

Keywords

  • All-optical switching
  • Intersubband transitions
  • Nitride semiconductors
  • Quantum wells

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Paiella, R., Driscoll, K., Li, Y., Liao, Y., Bhattacharyya, A., Thomidis, C., ... Moustakas, T. D. (2010). Intersubband device applications of nitride quantum structures. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7608). [76080N] https://doi.org/10.1117/12.836260

Intersubband device applications of nitride quantum structures. / Paiella, Roberto; Driscoll, Kristina; Li, Yan; Liao, Yitao; Bhattacharyya, Anirban; Thomidis, Christos; Zhou, Lin; Smith, David; Bellotti, Enrico; Moustakas, Theodore D.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7608 2010. 76080N.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Paiella, R, Driscoll, K, Li, Y, Liao, Y, Bhattacharyya, A, Thomidis, C, Zhou, L, Smith, D, Bellotti, E & Moustakas, TD 2010, Intersubband device applications of nitride quantum structures. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7608, 76080N, Quantum Sensing and Nanophotonic Devices VII, San Francisco, CA, United States, 1/24/10. https://doi.org/10.1117/12.836260
Paiella R, Driscoll K, Li Y, Liao Y, Bhattacharyya A, Thomidis C et al. Intersubband device applications of nitride quantum structures. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7608. 2010. 76080N https://doi.org/10.1117/12.836260
Paiella, Roberto ; Driscoll, Kristina ; Li, Yan ; Liao, Yitao ; Bhattacharyya, Anirban ; Thomidis, Christos ; Zhou, Lin ; Smith, David ; Bellotti, Enrico ; Moustakas, Theodore D. / Intersubband device applications of nitride quantum structures. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7608 2010.
@inproceedings{121f190c7b3c459bac5474a9e65322af,
title = "Intersubband device applications of nitride quantum structures",
abstract = "Nitride semiconductor quantum structures feature some unique properties for intersubband device development, including a record large conduction-band offset that allows extending the operating wavelength to the near-infrared spectral region, and large optical phonon energies that are advantageous for the development of THz devices. In this paper we review our recent work aimed at the demonstration of novel intersubband device functionalities using these materials. In particular, we have developed ultrafast all-optical switching devices operating at fiber-optic communication wavelengths, based on intersubband cross-absorption saturation in GaN/AlN quantum-well waveguides. Strong self-phase modulation of ultrafast optical pulses has also been measured in these waveguides, revealing a large intersubband refractive-index nonlinearity which is also promising for all-optical switching applications. Furthermore, we have demonstrated optically pumped intersubband light emission from GaN/AlN quantum wells at the record short wavelength of about 2 μm. Finally, we have used a rigorous Monte Carlo model to show that GaN/AlGaN quantum wells are promising for the development of THz quantum cascade lasers capable in principle of operation without cryogenic cooling.",
keywords = "All-optical switching, Intersubband transitions, Nitride semiconductors, Quantum wells",
author = "Roberto Paiella and Kristina Driscoll and Yan Li and Yitao Liao and Anirban Bhattacharyya and Christos Thomidis and Lin Zhou and David Smith and Enrico Bellotti and Moustakas, {Theodore D.}",
year = "2010",
doi = "10.1117/12.836260",
language = "English (US)",
isbn = "9780819480040",
volume = "7608",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Intersubband device applications of nitride quantum structures

AU - Paiella, Roberto

AU - Driscoll, Kristina

AU - Li, Yan

AU - Liao, Yitao

AU - Bhattacharyya, Anirban

AU - Thomidis, Christos

AU - Zhou, Lin

AU - Smith, David

AU - Bellotti, Enrico

AU - Moustakas, Theodore D.

PY - 2010

Y1 - 2010

N2 - Nitride semiconductor quantum structures feature some unique properties for intersubband device development, including a record large conduction-band offset that allows extending the operating wavelength to the near-infrared spectral region, and large optical phonon energies that are advantageous for the development of THz devices. In this paper we review our recent work aimed at the demonstration of novel intersubband device functionalities using these materials. In particular, we have developed ultrafast all-optical switching devices operating at fiber-optic communication wavelengths, based on intersubband cross-absorption saturation in GaN/AlN quantum-well waveguides. Strong self-phase modulation of ultrafast optical pulses has also been measured in these waveguides, revealing a large intersubband refractive-index nonlinearity which is also promising for all-optical switching applications. Furthermore, we have demonstrated optically pumped intersubband light emission from GaN/AlN quantum wells at the record short wavelength of about 2 μm. Finally, we have used a rigorous Monte Carlo model to show that GaN/AlGaN quantum wells are promising for the development of THz quantum cascade lasers capable in principle of operation without cryogenic cooling.

AB - Nitride semiconductor quantum structures feature some unique properties for intersubband device development, including a record large conduction-band offset that allows extending the operating wavelength to the near-infrared spectral region, and large optical phonon energies that are advantageous for the development of THz devices. In this paper we review our recent work aimed at the demonstration of novel intersubband device functionalities using these materials. In particular, we have developed ultrafast all-optical switching devices operating at fiber-optic communication wavelengths, based on intersubband cross-absorption saturation in GaN/AlN quantum-well waveguides. Strong self-phase modulation of ultrafast optical pulses has also been measured in these waveguides, revealing a large intersubband refractive-index nonlinearity which is also promising for all-optical switching applications. Furthermore, we have demonstrated optically pumped intersubband light emission from GaN/AlN quantum wells at the record short wavelength of about 2 μm. Finally, we have used a rigorous Monte Carlo model to show that GaN/AlGaN quantum wells are promising for the development of THz quantum cascade lasers capable in principle of operation without cryogenic cooling.

KW - All-optical switching

KW - Intersubband transitions

KW - Nitride semiconductors

KW - Quantum wells

UR - http://www.scopus.com/inward/record.url?scp=77951985257&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951985257&partnerID=8YFLogxK

U2 - 10.1117/12.836260

DO - 10.1117/12.836260

M3 - Conference contribution

AN - SCOPUS:77951985257

SN - 9780819480040

VL - 7608

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -