Intersubband absorption in AlNGaNAlGaN coupled quantum wells

Kristina Driscoll, Anirban Bhattacharyya, Theodore D. Moustakas, Roberto Paiella, Lin Zhou, David Smith

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Abstract

AlNGaNAlGaN coupled quantum wells grown by molecular beam epitaxy have been developed and characterized via intersubband absorption spectroscopy. In these structures, an AlGaN layer of sufficiently low Al content is used to achieve strong interwell coupling without the need for ultrathin inner barriers. At the same time, AlN is used in the outer barriers to provide the large quantum confinement required for near-infrared intersubband transitions. The composition of the inner barriers also provides a continuously tunable parameter to control the coupling strength. Double intersubband absorption peaks are measured in each sample, at photon energies in good agreement with theoretical expectations.

Original languageEnglish (US)
Article number141104
JournalApplied Physics Letters
Volume91
Issue number14
DOIs
StatePublished - Oct 11 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Driscoll, K., Bhattacharyya, A., Moustakas, T. D., Paiella, R., Zhou, L., & Smith, D. (2007). Intersubband absorption in AlNGaNAlGaN coupled quantum wells. Applied Physics Letters, 91(14), [141104]. https://doi.org/10.1063/1.2794013