Intersubband absorption in AlNGaNAlGaN coupled quantum wells

Kristina Driscoll, Anirban Bhattacharyya, Theodore D. Moustakas, Roberto Paiella, Lin Zhou, David Smith

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

AlNGaNAlGaN coupled quantum wells grown by molecular beam epitaxy have been developed and characterized via intersubband absorption spectroscopy. In these structures, an AlGaN layer of sufficiently low Al content is used to achieve strong interwell coupling without the need for ultrathin inner barriers. At the same time, AlN is used in the outer barriers to provide the large quantum confinement required for near-infrared intersubband transitions. The composition of the inner barriers also provides a continuously tunable parameter to control the coupling strength. Double intersubband absorption peaks are measured in each sample, at photon energies in good agreement with theoretical expectations.

Original languageEnglish (US)
Article number141104
JournalApplied Physics Letters
Volume91
Issue number14
DOIs
StatePublished - 2007

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quantum wells
absorption spectroscopy
molecular beam epitaxy
photons
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Driscoll, K., Bhattacharyya, A., Moustakas, T. D., Paiella, R., Zhou, L., & Smith, D. (2007). Intersubband absorption in AlNGaNAlGaN coupled quantum wells. Applied Physics Letters, 91(14), [141104]. https://doi.org/10.1063/1.2794013

Intersubband absorption in AlNGaNAlGaN coupled quantum wells. / Driscoll, Kristina; Bhattacharyya, Anirban; Moustakas, Theodore D.; Paiella, Roberto; Zhou, Lin; Smith, David.

In: Applied Physics Letters, Vol. 91, No. 14, 141104, 2007.

Research output: Contribution to journalArticle

Driscoll, K, Bhattacharyya, A, Moustakas, TD, Paiella, R, Zhou, L & Smith, D 2007, 'Intersubband absorption in AlNGaNAlGaN coupled quantum wells', Applied Physics Letters, vol. 91, no. 14, 141104. https://doi.org/10.1063/1.2794013
Driscoll K, Bhattacharyya A, Moustakas TD, Paiella R, Zhou L, Smith D. Intersubband absorption in AlNGaNAlGaN coupled quantum wells. Applied Physics Letters. 2007;91(14). 141104. https://doi.org/10.1063/1.2794013
Driscoll, Kristina ; Bhattacharyya, Anirban ; Moustakas, Theodore D. ; Paiella, Roberto ; Zhou, Lin ; Smith, David. / Intersubband absorption in AlNGaNAlGaN coupled quantum wells. In: Applied Physics Letters. 2007 ; Vol. 91, No. 14.
@article{ef5d06b5603648c49f89154cd0e6b7d6,
title = "Intersubband absorption in AlNGaNAlGaN coupled quantum wells",
abstract = "AlNGaNAlGaN coupled quantum wells grown by molecular beam epitaxy have been developed and characterized via intersubband absorption spectroscopy. In these structures, an AlGaN layer of sufficiently low Al content is used to achieve strong interwell coupling without the need for ultrathin inner barriers. At the same time, AlN is used in the outer barriers to provide the large quantum confinement required for near-infrared intersubband transitions. The composition of the inner barriers also provides a continuously tunable parameter to control the coupling strength. Double intersubband absorption peaks are measured in each sample, at photon energies in good agreement with theoretical expectations.",
author = "Kristina Driscoll and Anirban Bhattacharyya and Moustakas, {Theodore D.} and Roberto Paiella and Lin Zhou and David Smith",
year = "2007",
doi = "10.1063/1.2794013",
language = "English (US)",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - Intersubband absorption in AlNGaNAlGaN coupled quantum wells

AU - Driscoll, Kristina

AU - Bhattacharyya, Anirban

AU - Moustakas, Theodore D.

AU - Paiella, Roberto

AU - Zhou, Lin

AU - Smith, David

PY - 2007

Y1 - 2007

N2 - AlNGaNAlGaN coupled quantum wells grown by molecular beam epitaxy have been developed and characterized via intersubband absorption spectroscopy. In these structures, an AlGaN layer of sufficiently low Al content is used to achieve strong interwell coupling without the need for ultrathin inner barriers. At the same time, AlN is used in the outer barriers to provide the large quantum confinement required for near-infrared intersubband transitions. The composition of the inner barriers also provides a continuously tunable parameter to control the coupling strength. Double intersubband absorption peaks are measured in each sample, at photon energies in good agreement with theoretical expectations.

AB - AlNGaNAlGaN coupled quantum wells grown by molecular beam epitaxy have been developed and characterized via intersubband absorption spectroscopy. In these structures, an AlGaN layer of sufficiently low Al content is used to achieve strong interwell coupling without the need for ultrathin inner barriers. At the same time, AlN is used in the outer barriers to provide the large quantum confinement required for near-infrared intersubband transitions. The composition of the inner barriers also provides a continuously tunable parameter to control the coupling strength. Double intersubband absorption peaks are measured in each sample, at photon energies in good agreement with theoretical expectations.

UR - http://www.scopus.com/inward/record.url?scp=34948853408&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34948853408&partnerID=8YFLogxK

U2 - 10.1063/1.2794013

DO - 10.1063/1.2794013

M3 - Article

AN - SCOPUS:34948853408

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 141104

ER -