Abstract

Random telegraph noise fluctuations (RTF) manifest themselves as fluctuations in the transistor threshold voltage and drive (ON) current. RTF is caused by random trapping and detrapping of charges lying at the inversion channel of the device close to the oxide-semiconductor interface [1]. Traditionally, RTF were important only in analog design at low frequencies [2]. However, as complementary metal-oxide-semiconductor (CMOS) is scaling into the sub-100 nm regime, the effect of RTF as well as its variability is no longer negligible, even in digital design [3]. In fact, we have illustrated in past work that the presence of a single trap at the source end of the channel in a nanowire transistor can significantly degrade the on current [4]. In these simulations, we have utilized a 3D Monte Carlo device simulator in which the short-range portion of the Coulomb interaction was accounted for by a real-space molecular dynamics (MD) model, the details of which can be found in Ref. [5]. The model accounts for both the short-range and the long-range components of the Coulomb interaction and has been applied in many other studies [6].

Original languageEnglish (US)
Title of host publicationNanoelectronic Device Applications Handbook
PublisherCRC Press
Pages711-716
Number of pages6
ISBN (Electronic)9781466565241
ISBN (Print)9781466565234
DOIs
StatePublished - Jan 1 2017

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Telegraph
Coulomb interactions
Nanowires
Transistors
Heating
Threshold voltage
Molecular dynamics
Dynamic models
Simulators
Metals
Oxide semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Interplay of self-heating and short-range coulomb interactions due to traps in a 10 nm channel length nanowire transistor. / Hossain, Arif; Vasileska, Dragica; Raleva, Katerina; Goodnick, Stephen.

Nanoelectronic Device Applications Handbook. CRC Press, 2017. p. 711-716.

Research output: Chapter in Book/Report/Conference proceedingChapter

Hossain, Arif ; Vasileska, Dragica ; Raleva, Katerina ; Goodnick, Stephen. / Interplay of self-heating and short-range coulomb interactions due to traps in a 10 nm channel length nanowire transistor. Nanoelectronic Device Applications Handbook. CRC Press, 2017. pp. 711-716
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