Abstract
Infrared (i.r.) spectroscopy can provide useful chemical information about species present at semiconductor surfaces, at interfaces, and in thin films. Though inherently less sensitive than electron-based techniques, i.r. spectroscopic sensitivity can be greatly enhanced through application of multiple internal reflection geometry. Basic theory describing internal reflection techniques is presented, followed by a discussion of options for apparatus and optics. Finally, examples from the recent literature will be discussed.
Original language | English (US) |
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Pages (from-to) | 231-238 |
Number of pages | 8 |
Journal | Solid State Electronics |
Volume | 35 |
Issue number | 3 |
DOIs | |
State | Published - Mar 1992 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry